Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

Enhanced detection of broadband incoherent light with nanoridge plasmonics

Design of Subwavelength CMOS Compatible Plasmonic Photodetector for Nano-Electronic-Photonic Integrated Circuits

Electrical Detection of Plasmonic Waves Using an Ultra-Compact Structure Via a Nanocavity.

Plasmonic Nanoelectronics and Sensing

Broadband Nanophotonic Wireless Links and Networks Using On-Chip Integrated Plasmonic Antennas.

Narrowband Photodetection in the Near-Infrared with a Plasmon-Induced Hot Electron Device.

Plasmonics Nanosensor

Silicon-Based Optoelectronics Enhanced by Hybrid Plasmon Polaritons: Bridging Dielectric Photonics and Nanoplasmonics

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Coupling Plasmonic Pt Nanoparticles with AlGaN Nanostructures for Enhanced Broadband Photoelectrochemical-Detection Applications

Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO3-x/CsyWO3-xnanocrystals

Chip-Integrated All-Optical Diode Based on Nonlinear Plasmonic Nanocavities Covered with Multicomponent Nanocomposite

Enhancement of Photoresponse for InGaAs Infrared Photodetectors Using Plasmonic WO3-x/CsyWO3-x Nanocrystals

On-chip nanophotonics and future challenges

Highly Responsive Switchable Broadband DUV-NIR Photodetector and Tunable Emitter Enabled by Uniform and Vertically Grown III-V Nanowire on Silicon Substrate for Integrated Photonics

Ultrabroadband Photodetection with MoS2 and Gold Nanorod Using Gap-Mode Plasmon Effect

On-chip Nanophotonic Broadband Wavelength Detector with 2D-Electron Gas

Enhancement of photoresponse for InGaAs infrared photodetectors using plasmonic WO 3-x /Cs y WO 3-x nanocrystals

Plasmonic Nanoneedle Arrays with Enhanced Hot Electron Photodetection for Near‐IR Imaging

Light phase detection with on-chip petahertz electronic networks