Abstract:Driven by the evolution of electronic packaging technology for high-dense integration of high-power, high-frequency, and multi-function devices in modern electronics, thermal management materials have become a crucial component for guaranteeing the stable and reliable operation of devices. Because of its admirable in-plane thermal conductivity, graphene is considered as a desired thermal conductor. However, the promise of graphene films has been greatly weakened as the existence of grain boundaries lead to a high extent of phonon scattering. Here, a stitching strategy is adopted to fabricate an rGO/g-C3N4 film, where 2D g-C3N4 works as a linker to covalently connect adjacent rGO sheets for expanding the size of graphene and forming an in-plane rGO/g-C3N4 heterostructure. The in-plane thermal conductivity of the rGO/g-C3N4 film reaches 41.2 W m–1 K–1 at a g-C3N4 content of only 1 wt %, which increased by 17.3% compared to pristine rGO. The interfaced thermal resistance between rGO and g-C3N4 is further examined by non-equilibrium molecular dynamics simulations. Furthermore, owing to the unique light absorption and welding ability of g-C3N4, the rGO/g-C3N4 film presents superior solar-thermal and electric-thermal responses to controllably regulate the chip temperature against overcooling. This work provides a facile approach to construct a large-sized rGO sheet and combines heat dissipation and heating capability in the same thermal management material for future electronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c22057?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c22057</a>.Thermally conductive calculation, molecular dynamics simulations, FTIR spectra, SEM, EDS mapping, XPS, and electrical conductivity of the samples (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c22057/suppl_file/am0c22057_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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