An SOI-Based 7.5/spl mu/m-Thick 0.15x0.15mm2 RFID Chip

M. Usami,Akira Sato,H. Tanabe,T. Iwamatsu,S. Maegawa,Y. Ohji
DOI: https://doi.org/10.1109/ISSCC.2006.1696165
2006-09-18
Abstract:A 0.15times0.15mm2 RFID chip containing a 128b ROM is fabricated in a 0.18mum 4M SOI CMOS technology. It achieves 480mm read range with a 2.45GHz carrier for a reader output power of 300mW. The chip is thinned precisely by using an SOI buried oxide layer structure as an etch stop. An RFID antenna is connected to the chip by using a double-surface electrode
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