Abstract:Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally that this critical angle varies according to many factors, including beam energy, ion species and target material. In this first part of a set of papers, we consider a composite model of stress-free strain and isotropic swelling with a generalized treatment of stress modification along idealized ion tracks. We obtain a highly-general linear stability result with a careful treatment of arbitrary depth-dependence profiles for each of the stress-free strain-rate tensor, a source of deviatoric stress modification, and isotropic swelling, a source of isotropic stress. We compare our theoretical results with experimental measurements of angle-dependent deviatoric and isotropic stresses for 250eV Ar+ on Si. Our analysis suggests that the presence of angle-independent isotropic stress and the relationship between the amorphous-crystalline and free interfaces may be strong contributors to critical angle selection, while the influence of inhomogeneous stress modification is seemingly non-existent in the idealized case of diagonally-translated interface and stress generated entirely along a thin, down-beam ion track. We also consider an opposing idealization: that of interfaces defined by vertical translation, with stress modification along the vertical regardless of beam orientation. The unacceptable variability in predictions resulting from these two idealizations, both of which have appeared in recent analyses, prompts modeling refinements discussed in subsequent papers in this set. These refinements include the relationship between interfaces and a more sophisticated treatment of the inhomogeneous stress field.

Nano-sculptured thin film thickness variation with incidence angle

Multilayer Thin Films/substrate System with Variable Film Thickness Subjected to Non-Uniform Misfit Strains

Exploration of the Origin of Substrate Effects and Elastic Strain Properties During Thin Film Nanoindentation

Physical mechanisms affecting critical angle for nanopatterning in irradiated thin films: I. A composite model

A new method for high resolution curvature measurement applied to stress monitoring in thin films

Characterization of the Variation of the Material Properties in a Freestanding Inhomogeneous Thin Film

Measurement of Nanoscale Film Thickness Using Neutron Depth Profiling Technique

Characterization of highly anisotropic three-dimensionally nanostructured surfaces

A Theoretical Analysis for Arbitrary Residual Stress of Thin Film/Substrate System WithNonnegligible Film Thickness

Simultaneous Determination of the Residual Stress, Elastic Modulus, Density and Thickness of Ultrathin Film Utilizing Vibrating Doubly Clamped Micro-/Nanobeams

Modeling and Characterization of Residual Stress Distribution of Thin Film/Substrate Structure with Non-negligible Film Thickness from Morphology

Thickness Estimation of the Si Thin Films: a Simulation Study

Novel Method of Measuring the Thickness of Nanoscale Films Using Energy Dispersive X‐Ray Spectroscopy Line Scan Profiles

Correction of Substrate-Induced Thin-Film Modulus Deviations in Nanoindentation Measurements

Thin Film/substrate Systems Featuring Arbitrary Film Thickness and Misfit Strain Distributions. Part I: Analysis for Obtaining Film Stress from Non-Local Curvature Information

Multiscale Modeling and Experimental Validation for Nanochannel Depth Control in Atomic Force Microscopy-Based Nanofabrication

Quantitative Evaluation of Film Thickness Uniformity: Application to Off-Axis Magnetron Source Onto a Rotating Substrate

XPS Analysis of Nano‐thin Films on Substrate

Modelling of an obliquely deposited thin film in three dimensions by kinetic Monte Carlo method

Numerical analysis of thickness uniformity of thin film deposited by rectangular planar target

Dynamics of ultrathin metal films on amorphous substrates