High contrast reflection modulation near 1.55mum in InP 2D photonic crystals on silicon wafer.

G. Vecchi,F. Raineri,I. Sagnes,Ko-Hsin Lee,S. Guilet,L. Le Gratiet,A. Talneau,A. Levenson,R. Raj,F. Van Laere,G. Roelkens,D. van Thourhout,R. Baets
DOI: https://doi.org/10.1364/OE.15.001254
IF: 3.8
2007-02-05
Optics Express
Abstract:We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.
What problem does this paper attempt to address?