Ionic Modulation of Interfacial Magnetism in Light Metal/Ferromagnetic Insulator Layered Nanostructures
Mengmeng Guan,Lei Wang,Shishun Zhao,Bin Peng,Wei Su,Zhexi He,Guohua Dong,Tai Min,Jing Ma,Zhongqiang Hu,Wei Ren,Zuo-Guang Ye,Ce-Wen Nan,Ziyao Zhou,Ming Liu
DOI: https://doi.org/10.1002/adfm.201805592
IF: 19
2018-01-01
Advanced Functional Materials
Abstract:Ferromagnetic insulator thin film nanostructures are becoming the key component of the state-of-the-art spintronic devices, for instance, yttrium iron garnet (YIG) with low damping, high Curie temperature, and high resistivity is explored into many spin-orbit interactions related spintronic devices. Voltage modulation of YIG, with great practical/theoretical significance, thus can be widely applied in various YIG-based spintronics effects. Nevertheless, to manipulate ferromagnetism of YIG through electric field (E-field), instead of current, in an energy efficient manner is essentially challenging. Here, a YIG/Cu/Pt layered nanostructure with a weak spin-orbit coupling interaction is fabricated, and then the interfacial magnetism of the Cu and YIG is modified via ionic liquid gating method significantly. A record-high E-field-induced ferromagnetic resonance field shift of 1400 Oe is achieved in YIG (17 nm)/Cu (5 nm)/Pt (3 nm)/ionic liquid/Au capacitor layered nanostructures with a small voltage bias of 4.5 V. The giant magnetoelectric tunability comes from voltage-induced extra ferromagnetic ordering in Cu layer, confirmed by the first-principle calculation. This E-field modulation of interfacial magnetism between light metal and magnetic isolator may open a door toward compact, high-performance, and energy-efficient spintronic devices.