Abstract:Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that significantly lowers power usage and improves circuit speed, facilitating efficient neuron circuit design. Our innovative integrate-and-fire (IF) neuron model demonstrates exceptional performance metrics: 44 nW power consumption (85% lower than current designs), 0.964 fJ energy per spike (36% improvement over state-of-the-art), and 20 MHz spiking frequency. The architecture exhibits robust stability across process-voltage-temperature (PVT) variations, maintaining consistent performance with less than 7% spike amplitude variation for channel lengths from 7.5nm to 15nm, supply voltages from 0.8V to 1.2V, and temperatures from -40°C to 120°C. The model features tunable thresholds from 0.8V to 1.4V and reliable operation across input spike pulse widths from 0.5 ns to 2 ns. This significant advancement in neuromorphic hardware paves the way for more efficient brain-inspired computing systems.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the power - efficiency and performance in neuromorphic computing systems to meet the requirements of next - generation artificial intelligence applications. Specifically, the author proposes a new Integrate - and - Fire (IF) neuron circuit design based on the nano - side - contacted Field Effect Diode (S - FED), aiming to significantly reduce power consumption and increase circuit speed, thus achieving an efficient neuron circuit design. ### Specific Problems and Solutions 1. **High - power Consumption Problem**: - **Traditional Computer Architectures**: Traditional Von Neumann architecture processors require frequent data exchanges when performing computing tasks, resulting in the so - called "Von Neumann bottleneck" and increasing the overall power consumption. - **Neuromorphic Computing**: Neuromorphic computing systems can perform complex tasks such as pattern recognition, reasoning, and decision - making with relatively low power consumption (about 20W) by imitating the working mechanism of the human brain. 2. **Limitations of Existing Neuron Circuits**: - Although existing neuron circuits have made some improvements in power consumption, they still have deficiencies in performance (such as spike frequency, energy consumption per spike, etc.). - For example, the CMOS IF neuron circuit proposed by Indiveri in 2003 has a power consumption of only 1.5 µW, but its spike frequency is low, which limits the overall performance. 3. **Proposed New Scheme**: - **S - FED Technology**: The author proposes an IF neuron circuit based on the nano - scale side - contacted Field Effect Diode (S - FED). S - FED has characteristics such as a high switching - current ratio and low parasitic capacitance, and can achieve efficient switching at low power consumption. - **Performance Improvement**: The newly designed IF neuron circuit exhibits excellent performance indicators: a power consumption of 44 nW (85% lower than existing designs), an energy consumption per spike of 0.964 fJ (36% higher than the state - of - the - art), and a spike frequency reaching 20 MHz. 4. **Stability and Adaptability**: - The new design shows good stability within the process - voltage - temperature (PVT) variation range. When the channel length is from 7.5 nm to 15 nm, the supply voltage is from 0.8 V to 1.2 V, and the temperature is from - 40°C to 120°C, the spike amplitude variation is less than 7%. - It supports adjustable threshold range (0.8 V to 1.4 V) and reliable input spike pulse width (0.5 ns to 2 ns) operations. ### Conclusion By introducing S - FED technology, this research significantly improves the power - efficiency and performance of neuromorphic computing systems, paving the way for more efficient brain - like computing systems in the future.

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