High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
David Reens,Michael Collins,Joseph Ciampi,Dave Kharas,Brian F. Aull,Kevan Donlon,Colin D. Bruzewicz,Bradley Felton,Jules Stuart,Robert J. Niffenegger,Philip Rich,Danielle Braje,Kevin K. Ryu,John Chiaverini,Robert McConnell
DOI: https://doi.org/10.1103/PhysRevLett.129.100502
2022-02-04
Abstract:Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped $^{88}\text{Sr}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $\mu$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.
Quantum Physics,Atomic Physics