Abstract:Electrically induced $p-n$ junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap $E_g$. Still, the upper limits of responsivity and noise equivalent power (NEP) at very large $E_g$ remained unknown. Here, we study the cryogenic performance of GBL detectors at $f=0.13$ THz by inducing gaps up to $E_g \approx 90$ meV, a value close to the limits observed in recent transport experiments. High value of the gap is achieved by using high-$\kappa$ bottom hafnium dioxide gate dielectric. The voltage responsivity, current responsivity and NEP optimized with respect to doping do not demonstrate saturation with gap induction up to its maximum values. The NEP demonstrates an order-of-magnitude drop from $\sim450$ fW/Hz$^{1/2}$ in the gapless state to $\sim30$ fW/Hz$^{1/2}$ at the largest gap. At largest induced band gaps, plasmonic oscillations of responsivity become visible and important for optimization of sub-THz response.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in bilayer graphene (graphene bilayer, GBL), the influence of the large bandgap generated by electrical induction on the performance of terahertz (THz) detectors. Specifically, the research aims to explore the maximum responsivity and the minimum noise - equivalent power (NEP) of GBL terahertz detectors when the induced bandgap $E_g$ reaches a large value under low - temperature conditions. ### Problem Background 1. **Existing Research** - Existing research has shown that at low temperatures, the bilayer graphene p - n junction with a bandgap generated by electrical induction can significantly improve the detection performance of sub - terahertz radiation. - However, the upper limits of the responsivity and NEP under a very large induced bandgap $E_g$ have not been clearly defined. 2. **Challenges** - In previous experiments, due to the non - optimality of the gate capacitance, further increasing the bandgap has encountered obstacles, so the performance limits under the maximum bandgap cannot be determined. - This research achieved a larger bandgap induction by using hafnium oxide (HfO₂) with a high dielectric constant as the back - gate dielectric and studied its influence on the detector performance. ### Research Objectives - **Main Objective**: To study the maximum voltage responsivity, current responsivity, and minimum NEP of bilayer graphene terahertz detectors under the maximum achievable bandgap. - **Theoretical Limitations**: Theoretically, the upper limit of the bandgap $E_g$ is determined by the inter - layer transition integral $\gamma_1\approx0.37 \, \text{eV}$. Most electrical studies of high - quality encapsulation structures show that the upper limit of the bandgap is slightly more than $0.1 \, \text{eV}$. ### Experimental Methods - **Materials and Device Fabrication** - Hafnium oxide (HfO₂) with a high dielectric constant was used as the back - gate dielectric, with a thickness of 27 nm and a dielectric constant $\kappa\sim10$. - The encapsulated bilayer graphene stacking structure includes bottom hBN (1.6 nm), bilayer graphene (BLG), and top hBN (30 nm). - Cr/Au contacts and gates with a split - gate configuration were fabricated to form a p - n junction. - **Measurement Methods** - The resistance characteristics under different gate voltages were measured to verify the induction of a large bandgap. - The terahertz photovoltage $V_{ph}$ was measured using the lock - in technique, and the photoresponse diagrams under different gate voltages were recorded. ### Main Findings - **Responsivity and NEP** - As the bandgap increases, both the voltage responsivity and the current responsivity increase linearly without saturation. - The noise - equivalent power (NEP) decreases from about $450 \, \text{fW/Hz}^{1/2}$ in the no - bandgap state to about $30 \, \text{fW/Hz}^{1/2}$ at the maximum bandgap. - **Plasma Oscillation** - At the maximum bandgap, the importance of plasma oscillation for optimizing the responsivity was observed. ### Conclusion This research shows that at low temperatures, as the bandgap increases, the responsivity and signal - to - noise ratio of bilayer graphene terahertz detectors are significantly improved without saturation. This finding provides important theoretical and experimental bases for the development of high - performance terahertz detectors.

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