Abstract:The angular dependence of magnetoresistance (MR) in antiferromagnetic half-Heusler HoAuSn single crystals have been systematically studied. Negative MR, as large as 99%, is observed at 9 T, is not restricted to the specific configuration of applied magnetics fields and current, and can persist up to 20 K, much higher than the Neel temperature (TN 1.9 K). Experiments and first-principles calculations suggest that the observed large negative MR is derived from a magnetic field that reconstructs the band structure and induces a Weyl point, which changes the carrier concentration. Taking into consideration that large negative MR has so far been rarely reported, especially in antiferromagnetic materials, it is anticipated that the present work not only offers a guideline for searching materials with large negative MR but also helps to further realize other exotic topological electronic states in a large class of antiferromagnetic half-Heusler compounds.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the angular dependence of magnetoresistance (MR) and the underlying physical mechanism in the magnetic - field - induced Weyl semimetal candidate material HoAuSn. Specifically: 1. **Observation of huge negative magnetoresistance**: In the experiment, it was observed that under a magnetic field of 9 tesla (T), the negative magnetoresistance can reach approximately 99%, and this phenomenon is not limited by specific magnetic field and current configurations and can last up to 20 kelvin (K), far above its Néel temperature (\(T_N\approx1.9\) K). This indicates that this material still exhibits significant negative magnetoresistance characteristics in a relatively high temperature range. 2. **Explanation of the origin of negative magnetoresistance**: Through first - principles calculations, the researchers推测 that this huge negative magnetoresistance is caused by the magnetic - field - induced transition from a trivial semimetal to a Weyl semimetal. This transition leads to a significant suppression of spin scattering, thus resulting in a huge negative magnetoresistance. 3. **Study of the angular dependence of magnetoresistance**: To further understand the properties of magnetoresistance, the researchers also measured in detail the changes in magnetoresistance at different angles. The results show that magnetoresistance is not only related to the magnetic field strength but also strongly depends on the angle between the magnetic field and the current. 4. **Search for other materials with similar properties**: Based on these findings, the researchers hope to provide guidance for the search for materials with large negative magnetoresistance and further realize other exotic topological electronic states, especially in a large class of antiferromagnetic half - Heusler compounds. In summary, this paper aims to reveal the influence of magnetic - field - induced Weyl semimetal transitions on magnetoresistance and explore its potential application prospects, especially in magnetic sensors and other spintronics devices.

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