Extrinsic and Intrinsic Anomalous Metallic States in Transition Metal Dichalcogenide Ising Superconductors
Ying Xing,Pu Yang,Jun Ge,Jiaojie Yan,Jiawei Luo,Haoran Ji,Zeyan Yang,Yongjie Li,Zijia Wang,Yanzhao Liu,Feng Yang,Ping Qiu,Chuanying Xi,Mingliang Tian,Yi Liu,Xi Lin,Jian Wang
DOI: https://doi.org/10.1021/acs.nanolett.1c01426
IF: 10.8
2021-08-30
Nano Letters
Abstract:The metallic ground state in two-dimensional (2D) superconductors has attracted much attention but is still under intense scrutiny. Especially, the measurements in the ultralow temperature region are challenging for 2D superconductors due to the sensitivity to external perturbations. In this work, the resistance saturation induced by external noise, named as the "extrinsic anomalous metallic state", is observed in 2D transition metal dichalcogenide (TMD) superconductor 4Ha-TaSe2 nanodevices. However, with further decreasing temperature, credible evidence of the intrinsic anomalous metallic state is obtained by adequately filtering external radiation. Our work indicates that, at ultralow temperatures, the anomalous metallic state can be experimentally revealed as the quantum ground state in 2D crystalline TMD superconductors. Besides, Ising superconductivity revealed by ultrahigh in-plane critical field (Bc2∥) going beyond the Pauli paramagnetic limit (Bp) is detected in 4Ha-TaSe2, from the one-unit-cell device to the bulk situation, which might be due to the weak coupling between the TaSe2 submonolayers.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01426.Crystal growth method, device fabrication method, sample characterization information, transport measurements details, schematics of the measurement circuits, transport data of the bulk 4Ha-TaSe2, VI curve and dV/dI curve of the 7.0 nm-thick TaSe2 device, intrinsic anomalous metallic state in 4.4 nm-thick 4Ha-TaSe2 device, magnetoresistance of 2.8 nm-thick, 5.0 nm-thick, 5.8 nm-thick, and 8.6 nm-thick TaSe2 devices under out-of-plane and in-plane magnetic fields, Bose metal fitting of the anomalous metallic state for the TaSe2 device, and Hall results of the 5.0 nm 4Ha-TaSe2 nanodevice and bulk (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology