Moiré amplification of highly tunable shift current response in twisted trilayer graphene

Yuncheng Mao,Claudio Attaccalite,Diego García Ovalle

2024-11-12

Abstract:In this work we analyze the shift current conductivity in helical twisted trilayer graphene. Without loss of generality, we show that the density of states and the twist angle set an upper bound for this response, which is inversely proportional to the square of the twist angle. For the case of ABA stacking and at the magic angle, the shift photoconductivity can reach values of order $10^4~\mathrm{\mu A \cdot nm \cdot V}^{-2}$ for frequencies below 50 meV, which can be attributed to the interband transitions between the two flattened middle bands close to the Fermi level. By tuning the twist angle, we demonstrate that the photoconductivity is shifted in the frequency range and it is further influenced by two additional factors: The magnitude of the shift vector and the energy separation between the bands. Furthermore, we propose a scenario in the AAA stacked configuration, where the photoconductivity can be of order $10^5~\mathrm{\mu A \cdot nm \cdot V}^{-2}$ in the THz regime, revealing a potential influence of the stacking in the optimization of the shift current conductivity. Therefore, a large density of states, a small twist angle and the layer stacking are ingredients that hold promising functionality for photovoltaic applications in moiré heterostructures.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to explore the shift - current (SC) response in helical twisted trilayer graphene (hTTG) and study its enhancement mechanisms under different stacking configurations and twist angles. Specifically, the paper attempts to answer the following key questions:

1. **Upper limit of shift - current response**:
- The paper analyzes how the density of states (DOS) and twist angle affect the upper limit of the shift - current response. Research shows that the shift - current response is proportional to the density of states and inversely proportional to the square of the twist angle.
- The formula is expressed as:
\[
\sigma_{a;bc}(\omega)=\frac{\sigma_0}{\theta^2}\Theta_{a;bc}(\omega)
\]
where \(\sigma_0\) is a constant defined by monolayer graphene parameters, and \(\theta\) is the twist angle.

2. **Shift - current response at the magic angle**:
- At the magic angle (about 1.95°) in the ABA stacking configuration, the shift - current response can reach \(10^4\ \mu A\cdot nm\cdot V^{- 2}\), which is attributed to the transition between two flat intermediate bands near the Fermi level.
- The high - density states and flat bands at the magic angle are the key factors for achieving a significant shift - current response.

3. **Effect of twist angle on shift - current**:
- Adjusting the twist angle will change the optical conductivity in the frequency range and is further affected by the magnitude of the shift vector and the inter - band energy separation. In particular, the shift - current response is significantly enhanced at small twist angles.

4. **Effect of different stacking configurations**:
- It is studied that in the AAA stacking configuration, the shift - current response can reach \(10^5\ \mu A\cdot nm\cdot V^{- 2}\) in the terahertz (THz) frequency band, showing the importance of the stacking method for optimizing the shift - current conductivity.
- The AAA stacking configuration exhibits a higher shift - current response compared to the ABA stacking configuration, especially in the THz frequency band.

5. **Effect of the chiral limit**:
- In the chiral limit, that is, when the twist angle approaches zero, the shift - current response is almost suppressed because the chiral flat - band wave function has sub - lattice polarization characteristics, resulting in a strictly zero inter - band connection.

### Summary

Through theoretical models and numerical calculations, this paper reveals the physical mechanism of the shift - current response in hTTG and its regulation methods. The research results show that small twist angles, high - density states, and specific stacking configurations (such as AAA stacking) are the key factors for achieving an efficient shift - current response, providing new ideas and directions for future development of photovoltaic applications based on moiré heterostructures.