Abstract:Transport studies of atomically thin 1T-TaS2 have demonstrated the presence of intermediate resistance states across the nearly commensurate (NC) to commensurate (C) charge density wave (CDW) transition, which can be further switched electrically. While this presents exciting opportunities for memristor applications, the switching mechanism could be potentially attributed to the formation of inhomogeneous C and NC domains. Here, we present combined electrical driving and photocurrent imaging of ultrathin 1T-TaS2 in a heterostructure geometry. While micron-sized CDW domains are seen upon cooling, electrically driven transitions are largely uniform, indicating that the latter likely induces true metastable CDW states, which we then explain by a free energy analysis. Additionally, we are able to perform repeatable and bidirectional switching across the intermediate states without changing sample temperature, demonstrating that atomically thin 1T-TaS2 can be further used as a robust and reversible multimemristor material for the first time.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02537?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02537</a>.1T-TaS2 synthesis, device fabrication, bias and laser power dependence of photocurrent, photocurrent imaging in lateral device geometry, additional photocurrent images of device in <a class="internalNav" href="#fig2">Figure </a><a class="internalNav" href="#fig2">2</a> with different lead combinations, comparison of photocurrent with sample topography, laser wavelength dependence of photocurrent, temperature-dependent photocurrent of thicker 1T-TaS2 flake, and free energy analysis of electrically driven transitions (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02537/suppl_file/nl0c02537_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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