Towards the Scalable Fabrication of thin-film Superconducting Parametric Amplifiers

Abdallah El Kass,Kevin A. F. Simoes,Cassandra Chua,David J. Reilly,Kun Zuo,Thomas A. Ohki
2024-12-20
Abstract:Kinetic inductance travelling-wave parametric amplifiers (KTWPAs) are emerging as core components in many applications where wideband cryogenic rf amplification at or near the quantum limit of added noise is critical. These thin film superconducting devices are unique in their ability to simultaneously provide large dynamic range and quantum-limited amplification of single photon to 100,000s of photon signals. Despite the promising performance of co-planar NbTiN thin-film KTWPAs, the original promise of a "simple" single-layer metal fabrication has encountered roadblocks and their broader adoption has been hindered by low fabrication yield. In this work, we present a post-lithography correction technique that eliminates short circuits, significantly improving yield and enabling reliable wafer-scale production. Using automated image acquisition, error analysis, and correction, we successfully fabricated operational KTWPAs on high-resistivity silicon, achieving > 10 dB between 2 - 4 GHz. This approach paves the way for the scaling up manufacturing of KTWPAs, positioning them for widespread deployment in quantum technologies.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to improve the large - scale manufacturing feasibility and reliability of superconducting parametric amplifiers (KTWPAs). Specifically, the author focuses on how to overcome the low yield problem in the existing manufacturing processes, so as to achieve the reliable mass production of these devices. KTWPAs play an important role in quantum computing and other low - temperature applications because they can provide broadband and high - dynamic - range signal amplification close to the quantum limit. ### Main problems: 1. **Low yield**: Although the traditional single - layer metal manufacturing method seems simple, it has encountered many obstacles in actual operation, resulting in a low yield. 2. **Manufacturing complexity**: Due to the design requirements of KTWPAs for precise control of the film width and length and the need to maintain the consistency of the structure, defects such as short - circuits and over - growth are likely to occur during the manufacturing process, which seriously affect the performance and reliability of the device. ### Solutions: To meet the above challenges, the author proposes a post - lithography correction method based on image processing technology. This method can effectively eliminate common defects in the manufacturing process and significantly improve the yield and device performance through automated image acquisition, error analysis and targeted correction. ### Specific measures: - **Image processing and defect detection**: Use edge detection, cluster analysis and other techniques to identify and mark defects in the manufacturing process. - **Local correction**: Use focused ion beam (FIB) or additional lithography/dry etching steps to repair specific defects to ensure the continuity and integrity of the structure. Through these improvement measures, the author has successfully increased the manufacturing yield of KTWPAs and demonstrated its gain performance of more than 10 dB in the 2 - 4 GHz frequency band. This progress paves the way for the large - scale production of KTWPAs and more extensive applications, especially in the field of quantum computing.