Abstract:Recently, it has been discovered that the AB(N,O) 3 -type perovskite oxynitrides exhibit excellent dielectric, ferroelectric, and photocatalytic properties, promising for application in the fields of optoelectronics, energy storage, and communication. Figure 1 illustrates the crystal structures of conventional ABO 3 (taking CaTiO 3 as an example) and AB(N,O) 3 (taking LaTiN 2 O as an example) perovskites. Due to the differences in charge, ionic radius, and covalent bonding between N 3- and O 2- ions, the N substitution for O enhances the B(N,O) 6 octahedra tilting, giving rise to exotic properties and functionalities. However, the current fabrication process for this type of material is rather time-consuming, leading to products with appreciable amount of impurities. In this study, using oxide precursors and sodium amide as the nitrogen source, we successfully synthesized high-purity perovskite-type oxynitride CeTaN 2 O bulk materials under high-temperature and high-pressure conditions provided by a cubic-anvil press. The synthesis time was reduced to 1 hour, achieving rapid production. The lattice structure and physical properties of the obtained samples were comprehensively investigated. X-ray powder diffraction experiments and subsequent Rietveld refinement indicated that the title material shows an orthorhombic crystal structure with the space group of Pnma. X-ray absorption spectroscopy confirmed the charge configuration and the anion composition as Ce 3+ Ta 5+ N 2 O. Magnetization and specific heat measurements revealed that the exchange interactions are mostly antiferromagnetic with a potential magnetic transition below 2 K. The electrical transport data demonstrated typical semiconductor behavior, which can be further interpreted by a three-dimensional variable-range hopping model. Our study paves the way for the application of this exotic perovskite oxynitride.

A single-phase epitaxially grown ferroelectric perovskite nitride

Structure evolution and electric-field-induced reversible transition in perovskite Na(Nb<sub>1-</sub><i><sub>x</sub></i>Ta<i><sub>x</sub></i>)O<sub>3</sub> ceramics

High-Pressure Synthesis, Magnetic and Electrical Properties of Perovskite-Type CeTaN 2 O

Self-Assembled Single-Phase Perovskite Nanocomposite Thin Films

Semiconducting nonperovskite ferroelectric oxynitride designed ab initio

Achieving High Ferroelectric Polarization in Ultrathin BaTiO3 Films on Si

Room-Temperature Ferroelectricity of Paraelectric Oxides Tailored by Nano-Engineering.

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

An Epitaxial Ferroelectric Tunnel Junction on Silicon.

Interfacial Oxygen Octahedral Coupling Driven Robust Ferroelectricity in Epitaxial Na0.5Bi0.5TiO3 Thin Films

Synthesis of ferroelectric LaWN3 -- the first nitride perovskite

Solution Processed Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization

Interfacial Oxygen Octahedral Coupling-Driven Robust Ferroelectricity in Epitaxial Na 0.5 Bi 0.5 TiO 3 Thin Films

Integration of Oxide Semiconductor Thin Films with Relaxor-based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic Properties.

Stabilisation of Fe 2 O 3 -rich Perovskite Nanophase in Epitaxial Rare-earth Doped BiFeO 3 Films

Interface-Driven Multiferroicity in Cubic BaTiO<sub>3</sub>-SrTiO<sub>3</sub> Nanocomposites

Revealing the Role of B-site Cations in the Antiferroelectricity of NaNbO3-based Perovskites

Large-scale Multiferroic Complex Oxide Epitaxy with Magnetically Switched Polarization Enabled by Solution Processing.

Engineering Antiferroelectric Nucleation in Ferroelectric Films with Enhanced Piezoelectricity

Self-Assembled Ferroelectric Nanoarray.

Robust Room‐temperature Ferroelectricity and Magnetoelectric Coupling Effect in Epitaxial CaTiO3/SmFeO3 Thin Films