Hanle effect in current induced spin orientation

L. E. Golub,E. L. Ivchenko

2024-10-04

Abstract:Electrical spin orientation is the generation of electron spin proportional to the electric current. This phenomenon is allowed by symmetry in gyrotropic systems, e.g. in inversion-asymmetric structures with Rashba spin-orbit splitting. Here we develop a theory of electrical spin orientation for magnetic two-dimensional heterostructures. Spin-orbit coupled graphene and semiconductor heterostructures proximitized by ferromagnets are considered. The analytical theory is based on the Boltzmann kinetic equation for a spin-dependent distribution function and collision integral. We show that the induced spin demonstrates the Hanle effect: a direction of the spin depends on the out-of-plane magnetization. Importantly, the Hanle effect is extremely sensitive to the details of electron elastic scattering. In semiconductor heterostructures, the effect of magnetization is present for scattering by long-range disorder and absent for short-range scattering. In spin-orbit-coupled graphene, the Hanle effect occurs at any scattering potential, but the direction of the spin strongly changes with variation of the disorder type. The theory also describes the effect of valley-Zeeman splitting on the electrical spin orientation in graphene, where the spin experiences opposite Hanle effects in two valleys.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the Hanle effect in current - induced spin orientation (CISP). Specifically, the research aims to develop a theoretical framework for describing current - induced spin orientation in magnetic two - dimensional heterostructures, with particular attention to the manifestation of the Hanle effect in such systems.

### Research Background and Problems

Current - induced spin polarization (CISP) refers to the generation of electron spins proportional to the current by applying an electric field in some symmetry - allowed systems. This phenomenon is particularly prominent in two - dimensional asymmetric structures with Rashba spin - orbit coupling. This paper mainly studies two systems:

1. **Semiconductor heterostructures**: such as two - dimensional electron gas (2DEG) with parabolic energy dispersion, where the Rashba spin - orbit coupling strength is proportional to the wave vector.
2. **Spin - orbit - coupled graphene**: that is, a graphene system combined with materials such as transition metal dichalcogenides (TMDC), which has a linear energy dispersion relationship.

### Introduction of the Hanle Effect

The Hanle effect means that under the action of an applied magnetic field, the current - induced spin will precess, resulting in a non - zero value of the spin component in the current direction. This effect shows great sensitivity to different types of scattering mechanisms. For example, in semiconductor heterostructures, long - range disorder scattering will lead to the Hanle effect, while short - range disorder scattering will not; in spin - orbit - coupled graphene, the Hanle effect will occur under any scattering potential, but the spin direction will change significantly with the type of disorder.

### Research Objectives

The main objectives of this paper include:
- To develop a theory based on the Boltzmann kinetic equation for describing the Hanle effect of current - induced spin orientation in magnetic two - dimensional heterostructures.
- To explore the influence of different scattering mechanisms (such as long - range and short - range disorder scattering) on the Hanle effect.
- To analyze the influence of valley - Zeeman splitting on current - induced spin orientation in graphene, especially in the case where the spin orientations in the two valleys are opposite.

Through these studies, the authors hope to gain a deeper understanding of current - induced spin orientation and related phenomena, and provide theoretical support for the future design of new spintronic devices.