Abstract:Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation<a href="/articles/s41586-019-0986-9#ref-CR1">1</a>,<a href="/articles/s41586-019-0986-9#ref-CR2">2</a>. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moiré superlattice<a href="/articles/s41586-019-0986-9#ref-CR3">3</a>. In graphene/hexagonal boron nitride structures<a href="/articles/s41586-019-0986-9#ref-CR4">4</a>, the presence of a moiré superlattice can lead to the observation of electronic minibands<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41586-019-0986-9#ref-CR7">7</a>, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor–insulator transition at magic twist angles<a href="/articles/s41586-019-0986-9#ref-CR8">8</a>. Here, using semiconducting heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moiré superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moiré pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures<a href="/articles/s41586-019-0986-9#ref-CR9">9</a>.

Electromagnetic field assisted exciton diffusion in moiré superlattices

Direct Visualization of Dark Interlayer Exciton Transport in Moiré Superlattices

Collective optical properties of moiré excitons

Superradiance of strongly interacting dipolar excitons in moiré quantum materials

Intralayer charge-transfer moiré excitons in van der Waals superlattices

Anomalously Enhanced Diffusivity of Moiré Excitons via Manipulating the Interplay with Correlated Electrons

Bosonic Delocalization of Dipolar Moiré Excitons

Mott-moiré excitons

The moiré potential in twisted transition metal dichalcogenide bilayers

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Exciton interacting with a moiré lattice: Polarons, strings, and optical probing of spin correlations

Strongly correlated electrons and hybrid excitons in a moiré heterostructure

Interferences of electrostatic moiré potentials and bichromatic superlattices of electrons and excitons in transition metal dichalcogenides

Interaction of Moiré Excitons with Cavity Photons in Two-Dimensional Semiconductor Hetero-Bilayers

Exciton fine structure in twisted transition metal dichalcogenide heterostructures

Excitons in mesoscopically reconstructed moiré heterostructures

Interlayer Exciton Transport in MoSe 2 /WSe 2 Heterostructures

Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential

Non-linear and negative effective diffusivity of optical excitations in moiré-free heterobilayers

Itinerant ferromagnetism in transition metal dichalcogenides moiré superlattices

Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures