An antiferromagnetic diode effect in even-layered MnBi2Te4
Anyuan Gao,Shao-Wen Chen,Barun Ghosh,Jian-Xiang Qiu,Yu-Fei Liu,Yugo Onishi,Chaowei Hu,Tiema Qian,Damien Bérubé,Thao Dinh,Houchen Li,Christian Tzschaschel,Seunghyun Park,Tianye Huang,Shang-Wei Lien,Zhe Sun,Sheng-Chin Ho,Bahadur Singh,Kenji Watanabe,Takashi Taniguchi,David C. Bell,Arun Bansil,Hsin Lin,Tay-Rong Chang,Amir Yacoby,Ni Ni,Liang Fu,Qiong Ma,Su-Yang Xu
DOI: https://doi.org/10.1038/s41928-024-01219-8
2024-10-29
Abstract:In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.
Strongly Correlated Electrons