Abstract:Charge or spin-qubits can be realized by using gate-defined quantum dots (QDs) in semiconductors in a similar fashion to the processes used in CMOS for conventional field-effect transistors or more recent fin FET technology. However, to realize larger number of gate-defined qubits, multiples of gates with ultimately high resolution and fidelity is required. Electron beam lithography (EBL) offers flexible and tunable patterning of gate-defined spin-qubit devices for studying important quantum phenomena. While such devices are commonly realized by a positive resist process using metal lift-off, there are several clear limitations related to the resolution and the fidelity of patterning. Herein, we report a systematic study of an alternative TiN multi-gates definition approach based on the highest resolution hydrogen silsesquioxane (HSQ) EBL resist and all associated processing modes. The TiN gate arrays formed show excellent fidelity, dimensions down to 15 nm, various densities, and complexities. The processing modes developed were used to demonstrate applicability of this approach to forming multi-gate architectures for two types of spin-qubit devices prototypic to i) NW/fin-type FETs and ii) planar quantum well-type devices, both utilizing epi-grown Ge device layers on Si, where GeSn or Ge are the host materials for the QDs.

What problem does this paper attempt to address?

### Problems the paper attempts to solve The paper aims to solve the problem of achieving a high - fidelity titanium nitride (TiN) processing mode in multi - gate germanium - based (Ge - based) quantum devices. Specifically, the paper focuses on how to precisely define and fabricate multi - gate structures for quantum dots (QDs) on the nanoscale through techniques such as electron - beam lithography (EBL) and reactive - ion etching (RIE), thus supporting the development of scalable qubit devices. #### Main problems include: 1. **Definition of multi - gate structures with high resolution and high fidelity**: - In order to realize practical quantum computing, multi - gate structures with high density and complexity need to be fabricated at very small sizes (such as 15 nm and below). - Common positive photoresists (such as PMMA) and metal lift - off processes have limitations in resolution and fidelity and cannot meet these requirements. 2. **Applicability to different types of quantum device architectures**: - Two main types of quantum device architectures are involved in the research: i) NW/fin - type field - effect transistors (FETs) and ii) planar quantum well (QW) - type devices. - Each architecture has different requirements for the processing technology. For example, NW - type devices require three - dimensional structures and conformal deposition, while QW - type devices need to achieve high density and complexity at extremely small sizes. 3. **Material selection and compatibility**: - The paper explores the application of germanium (Ge) or germanium - tin (GeSn) layers epitaxially grown on a silicon substrate as quantum dot host materials. - The selection of TiN as a high - k metal - gate material and its compatibility with these materials is one of the focuses of the research. 4. **Improved photoresist and developer**: - Use hydrogen silsesquioxane (HSQ) as a high - resolution inorganic photoresist and introduce a salt - containing NaOH developer to improve the patterning quality and fidelity. - Solve the limitations of the traditional TMAH developer on small - size structures and achieve finer patterning. Through systematic research and optimization of these processing modes, the paper shows how to achieve unprecedented high resolution and high fidelity in multi - gate TiN structures, providing a solid foundation for future quantum computing technologies. ### Key formulas - **Line width and spacing**: \[ W = 15 \text{ nm}, \quad S = 2\times W \] where \( W \) is the line width and \( S \) is the spacing between adjacent lines. - **Exposure dose**: \[ D_{\text{min}} = 4 \text{ k}\mu\text{C/cm}^2 \] The minimum exposure dose depends on the resolution of the pattern generator and the beam step size. - **Resistivity measurement**: \[ \rho=\frac{V\cdot d}{I\cdot L} \] where \( V \) is the voltage, \( I \) is the current, \( d \) is the thickness, and \( L \) is the length.

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