Large Area Near-Field Thermophotovoltaics for Low Temperature Applications

Jennifer Selvidge,Ryan M. France,John Goldsmith,Parth Solanki,Myles A. Steiner,Eric J. Tervo

2024-08-02

Abstract:Thermophotovoltaics, devices that convert thermal infrared photons to electricity, offer a key pathway for a variety of critical renewable energy technologies including thermal energy storage, waste heat recovery, and direct solar-thermal power generation. However, conventional far-field devices struggle to generate reasonable powers at lower temperatures. Near-field thermophotovoltaics provide a pathway to substantially higher powers by leveraging photon tunneling effects. Here we present a large area near-field thermophotovoltaic device, created with an epitaxial co-fabrication approach, that consists of a self-supported 0.28 cm2 emitter-cell pair with a 150 nm gap. The device generates 1.22 mW at 460 C, a twenty-five-fold increase over the same cell measured in a far-field configuration. Furthermore, the near-field device demonstrates short circuit current densities greater than the far-field photocurrent limit at all the temperatures tested, confirming the role of photon tunneling effects in the performance enhancement. Modeling suggests several practical directions for cell improvements and further increases in power density. These results highlight the promise of near-field thermophotovoltaics, especially for low temperature applications.

Materials Science,Applied Physics

What problem does this paper attempt to address?

This paper attempts to address the issue of improving the energy conversion efficiency of thermophotovoltaic (TPV) devices under low-temperature conditions. Specifically, traditional far-field TPV devices struggle to generate reasonable power output at lower temperatures. Near-field TPV technology, by utilizing the photon tunneling effect, can significantly enhance energy conversion efficiency at lower temperatures. This paper introduces the design and fabrication method of a large-area near-field TPV device, which can produce 1.22 milliwatts of power output at 460°C, a 25-fold increase compared to far-field configurations. Additionally, experimental results show that at all tested temperatures, the short-circuit current density of the near-field TPV device exceeds the far-field photocurrent limit, validating the effectiveness of the near-field enhancement effect. These results highlight the great potential of near-field TPV in low-temperature applications.