Abstract:The large Nernst effect is advantageous for developing transverse Nernst thermoelectric generators or Ettingshausen coolers within a single component, avoiding the complexity of electron- and hole-modules in longitudinal Seebeck thermoelectric devices. We report a large Nernst signal reaching 130 uV/K at 8 K and 13 T in the layered metallic antiferromagnet EuAl$_2$Si$_2$. Notably, this large transverse Nernst thermopower is two orders of magnitude greater than its longitudinal counterpart. The Nernst coefficient peaks around 4 K and 8 K at 3 T and 13 T, respectively. At similar temperatures, both the Hall coefficient and the Seebeck signal change sign. Additionally, nearly compensated electron- and hole-like carriers with high mobility ($\sim$ 4000 cm$^2$/Vs at 4 K) are revealed from the magnetoconductivity. These findings suggest that the large Nernst effect and vanishing Seebeck thermopower in EuAl$_2$Si$_2$ are due to the compensated electron- and hole-like bands, along with the high mobility of the Weyl band near the Fermi level. Our results underscore the importance of band compensation and topological fermiology in achieving large Nernst thermopower and exploring potential Nernst thermoelectric applications at low temperatures.

What problem does this paper attempt to address?

The paper primarily investigates the large Nernst effect observed in the layered antiferromagnetic metal EuAl2Si2. The research team found that under specific low-temperature (approximately 8K) and strong magnetic field (13 Tesla) conditions, this material can exhibit a Nernst signal as high as 130 μV/K. This value is significantly higher than its longitudinal Seebeck effect and exceeds the typical Nernst coefficient in metals by two orders of magnitude. Specifically, the authors discovered through experiments that: - At 8K and 13T, the Nernst coefficient reached 130 μV/K. - Meanwhile, the Seebeck coefficient was very small (about 1 μV/K) and changed sign at around 10K. - These characteristics stem from the effective compensation of electrons and holes and high mobility (approximately 4000 cm²/Vs). - The material contains a linear dispersion band structure, including a pair of Weyl points located about 60 meV below the Fermi level. The study also points out that these unique properties in EuAl2Si2 make it an ideal candidate for developing transverse Nernst thermoelectric generators or Ettingshausen coolers, as this can avoid the complexities and limitations present in traditional longitudinal Seebeck thermoelectric devices. Additionally, the high Nernst effect exhibited by this material is similar to phenomena reported in other topological semimetals, suggesting that similar physical mechanisms may be at play. In summary, this research aims to explore new materials capable of achieving efficient transverse thermoelectric conversion in a single material to overcome the issues present in traditional thermoelectric devices and provide new directions for the development of future thermoelectric applications.

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