Development of ultrafast four-dimensional precession electron diffraction

Toshiya Shiratori,Jumpei Koga,Takahiro Shimojima,Kyoko Ishizaka,Asuka Nakamura

2024-07-09

Abstract:Ultrafast electron diffraction/microscopy technique enables us to investigate the nonequilibrium dynamics of crystal structures in the femtosecond-nanosecond time domain. However, the electron diffraction intensities are in general extremely sensitive to the excitation errors (i.e., deviation from the Bragg condition) and the dynamical effects, which had prevented us from quantitatively discussing the crystal structure dynamics. Here, we develop a four-dimensional precession electron diffraction (4D-PED) system by which time ($t$) and electron-incident-angle ($\phi$) dependences of electron diffraction patterns ($q_x,q_y$) are recorded. Nonequilibrium crystal structure refinement on VTe$_{2}$ demonstrates that the ultrafast change in the crystal structure can be quantitatively determined from 4D-PED. We further perform the analysis of the $\phi$ dependence, from which we can qualitatively estimate the change in the reciprocal lattice vector parallel to the optical axis. These results show the capability of the 4D-PED method for the quantitative investigation of ultrafast crystal structural dynamics.

Materials Science

What problem does this paper attempt to address?

The problem this paper attempts to address is the difficulty in quantitatively analyzing crystal structure dynamics in ultrafast electron diffraction techniques due to excitation errors (i.e., deviation from the Bragg condition) and dynamic effects. Specifically, traditional ultrafast electron diffraction methods are highly sensitive to excitation errors and dynamic effects when detecting changes in the non-equilibrium crystal structure of materials, which limits the quantitative discussion of crystal structure dynamics.

To solve this problem, the authors developed a four-dimensional precession electron diffraction (4D-PED) system. By recording electron diffraction patterns (𝑞𝑥, 𝑞𝑦) dependent on time (t) and incident electron angle (𝜙), this system can significantly reduce the impact of excitation errors and dynamic effects, thereby enabling quantitative studies of ultrafast crystal structure dynamics. Specific applications include:

1. **System Validation**: Validating the effectiveness and accuracy of the 4D-PED system by measuring single-crystal silicon.
2. **Photo-induced Crystal Structure Dynamics Study**: Using VTe₂ as an example, demonstrating the advantages of 4D-PED in detecting photo-induced crystal structure changes, especially in the refinement of non-equilibrium crystal structures on the picosecond timescale.
3. **Lattice Vector Change Analysis**: Quantitatively evaluating changes in the reciprocal lattice vectors parallel to the optical axis by analyzing the diffraction intensity changes dependent on the incident electron angle (𝜙).

These results indicate that the 4D-PED method has significant potential for the quantitative study of ultrafast crystal structure dynamics.