Enhancing resonant second harmonic generation in bilayer WSe2 by layer-dependent exciton-polaron effect

Soonyoung Cha,Tianyi Ouyang,Takashi Taniguchi,Kenji Watanabe,Nathaniel M. Gabor,Chun Hung Lui

2024-07-02

Abstract:Two-dimensional (2D) materials serve as exceptional platforms for controlled second harmonic generation (SHG), an important nonlinear optical phenomenon with diverse applications. Current approaches to SHG control often depend on non-resonant conditions or symmetry breaking via single-gate control. Here, we employ dual-gate bilayer WSe2 to demonstrate a new SHG enhancement concept that leverages strong exciton resonance and layer-dependent exciton-polaron effect. By selectively localizing injected holes within one layer, we induce exciton-polaron states in the hole-filled layer while maintaining normal exciton states in the charge-neutral layer. The distinct resonant conditions of these layers effectively break interlayer inversion symmetry, thereby promoting resonant SHG. Our method achieves a remarkable 40-fold enhancement of SHG at minimal electric field, equivalent to conditions near the dielectric-breakdown threshold but using only ~3% of the critical breakdown field. Our findings also reveal significant sensitivity of resonant SHG to carrier density and carrier type, with distinct enhancement and quenching observed across different gating regimes. This advancement offers an innovative approach to manipulating SHG in 2D excitonic materials and provides a potent spectroscopic tool for probing layer-dependent quantum states.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the problem of enhancing second - harmonic generation (SHG) in bilayer WSe₂ materials. Specifically, by taking advantage of strong exciton resonances and layer - dependent exciton - polariton effects, the authors propose a new method to significantly enhance SHG. Conventional methods usually rely on non - resonant conditions or break symmetry through single gating, and these methods have limitations in efficiency and may bring risks such as dielectric breakdown. The innovative method proposed in this paper can achieve a significant enhancement of SHG under an extremely low electric field, while revealing the high sensitivity of SHG to carrier density and type, which provides a new perspective for manipulating SHG in two - dimensional materials.

### Main research content
1. **Background introduction**:
- Second - harmonic generation (SHG) is an important nonlinear optical phenomenon and has wide applications in multiple scientific fields such as frequency conversion, quantum optics, material characterization, surface research, and bio - imaging.
- Two - dimensional materials (such as transition metal dichalcogenides TMDs) become an ideal platform for controlling SHG because of their unique inter - layer symmetry and stacking mode.

2. **Limitations of existing methods**:
- Current methods usually rely on non - resonant conditions or break symmetry through single gating, but these methods have limitations in improving SHG efficiency.
- Increasing the electric field strength may lead to dielectric breakdown and other instabilities.

3. **Innovative method**:
- The authors use double - gated bilayer WSe₂. By selectively injecting holes in one layer, they induce the formation of layer - specific exciton - polariton states while maintaining the normal exciton state in the other layer.
- This method breaks the inversion symmetry between layers, thereby promoting the generation of resonant SHG.

4. **Experimental results**:
- The experimental results show that under an extremely low electric field (only about 3% of the critical breakdown field strength), the SHG intensity can be increased by 40 times.
- SHG shows high sensitivity to carrier density and type, and different enhancement and quenching behaviors are observed under different gating conditions.

5. **Mechanism analysis**:
- Through reflection - contrast measurement and SHG measurement, the authors reveal the mechanism of SHG enhancement. In the i - p (one layer is hole - filled and the other layer is intrinsic) state, one layer generates a strong resonant SHG signal, while the other layer generates a weaker signal, lacking destructive interference, resulting in a significant enhancement of the net SHG signal.
- In the p - p (both layers are hole - filled) and n (electron - injection) states, the SHG signal is quenched.

### Conclusion
This paper proposes a new method based on strong exciton resonances and layer - dependent exciton - polariton effects, which can significantly enhance SHG in bilayer WSe₂ under an extremely low electric field. This method not only improves the efficiency of SHG but also provides a new tool for exploring layer - dependent quantum states in two - dimensional materials.