Demonstration of low power and highly uniform 6-bit operation in SiO2-based memristors embedded with Pt nanoparticles

G. Kleitsiotis,P. Bousoulas,S. D. Mantas,C. Tsioustas,I. A. Fyrigos,G. Sirakoulis,D. Tsoukalas
2024-06-19
Abstract:In this work, an optimized method was implemented for attaining stable multibit operation with low energy consumption in a two-terminal memory element made from the following layers: Ag/Pt nanoparticles (NPs)/SiO2/TiN in a 1-Transistor-1-Memristor configuration. Compared to the reference sample where no NPs were embedded, an enlarged memory window was recorded in conjunction with reduced variability for both switching states. A comprehensive numerical model was also applied to shed light on this enhanced performance, which was attributed to the spatial confinement effect induced by the presence of the Pt NPs and its impact on the properties of the percolating conducting filaments (CFs). Although 5-bit precision was demonstrated with the application of the incremental-step-pulse-programming (ISPP) algorithm, the reset process was unreliable and the output current increased abnormally when exceeded the value of 150 uA. As a result, the multibit operation was limited. To address this issue, a modified scheme was developed to accurately control the distance between the various resistance levels and achieve highly reliable 6-bit precision. Our work provides valuable insights for the development of energy-efficient memories for applications where a high density of conductance levels is required.
Hardware Architecture,Emerging Technologies,Applied Physics
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to improve the multi - bit operation stability and reliability of silica (SiO₂) - based memristors under low - energy - consumption conditions. Specifically, the objectives of the paper include: 1. **Expand the memory window and reduce the variability of switching states**: By introducing platinum nanoparticles (Pt NPs), the researchers hope to achieve a wider memory window (about \(10^5\)) and lower switching - state variability (\(\sigma/\mu < 0.4\)). 2. **Achieve reliable multi - bit operations**: Although 5 - bit precision has been achieved using the incremental step - pulse programming (ISPP) algorithm, the reset process is unreliable and the output current increases abnormally by more than 150 μA. To solve this problem, the researchers have developed an improved scheme to precisely control the distance between different resistance levels and achieve highly reliable 6 - bit precision. 3. **Understand the physical mechanisms for enhanced performance**: By applying a comprehensive numerical model, the researchers have explained how the space - confinement effect caused by platinum nanoparticles affects the properties of conductive filaments (CFs), thereby improving device performance. 4. **Optimize the programming algorithm**: In order to make full use of the unique characteristics of memristors, the researchers have proposed an adaptive state - control algorithm (ASCA) to achieve reliable and efficient multi - bit operations. In summary, this research aims to provide valuable insights for the development of high - efficiency, high - density memories, especially in applications that require a large number of conductance levels.