Abstract:As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.

What problem does this paper attempt to address?

This paper mainly discusses the phenomenon of abnormal charge density wave (CDW) in single-layer vanadium dichalcogenides (VX2, X=S, Se, and Te), especially the characteristics introduced by the Janus structure. The Janus structure provides an opportunity for adjusting the CDW state and related properties by breaking the symmetry. Although the Janus structure has been achieved and demonstrated unique properties in semiconductor 2D TMDs, research on metal 2D TMDs and their CDW states is still limited. Researchers successfully prepared a single-layer Janus VTeSe by surface seleniumization treatment, and observed a √13×√13 CDW state with triple rotational symmetry breaking by scanning tunneling microscopy. Combined with theoretical calculations, they found that this CDW state is not caused by the traditional electron-phonon coupling, but is related to the charge modulation in Janus VTeSe. This discovery opens up new avenues for studying CDW states and artificially controlling electronic properties for multifunctional electronic devices. In the paper, the authors first introduce the importance of material symmetry, and then describe how to fabricate Janus VTeSe through atomic-level surface seleniumization method, and characterize it by X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM). Further scanning tunneling microscopy/spectroscopy (STM/STS) experiments reveal the complex orbital texture of Janus VTeSe near the Fermi level. Through density functional theory (DFT) calculations, they propose that the √13×√13 CDW state originates from charge modulation, which goes beyond the conventional understanding of the electron-phonon coupling mechanism. In summary, the main contribution of the paper is to demonstrate how the Janus structure influences the CDW state of 2D TMDs, providing new insights into understanding and controlling the electronic properties of such materials.

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