Quantum oscillations in Rashba semiconductor BiTeCl
z j xiang,dan zhao,f chen,x h chen,c shang,x g luo,teresa wu,shan ying li,b y pan
DOI: https://doi.org/10.1103/PhysRevB.90.201202
IF: 3.7
2014-01-01
Physical Review B
Abstract:Recently, a Dirac surface state (SS) was observed in Rashba semiconductor BiTeCl by angle-resolved photoemission spectroscopy (ARPES), which suggested strong inversion symmetry breaking therein, despite the absence of such symmetry breaking in existing first-principles calculations. To clarify the aforementioned conflict as well as understand the nature of such emergent phenomenon, we employ both high-field Shubnikov-de Haas (SdH) oscillation and Hall measurements to study BiTeCl single crystals. Both techniques yield consistent observation of a three-dimensional Fermi surface from a bulk state, while Dirac surface state contribution appears absent. Finally, we propose that various gating techniques could be used to explore the novel topological nature of this material.