Abstract:This work aims to study the conditions of topological phase transition (TPT) between the topological and trivial states in the antiferromagnetic topological insulator (AFM TI) MnBi[Formula: see text]Te[Formula: see text] and propose some theory about the relationship of this TPT with the possibility of axion-like state realization in this material. Using the density functional approach we have analyzed the changes in the electronic and spin structure of topological surface states (TSSs) and the nearest conduction and valence bands (CB and VB) including the changes in the bulk band gap as well as the Dirac point (DP) gap in TSSs under variation of the spin-orbit coupling strength in the region of the TPT for infinite crystal and slab with a surface both. We have shown that in both cases the TPT occurs with inversion of the contributions of the Bi-[Formula: see text] and Te-[Formula: see text] states of different parity at the gap edges related to change in the gap sign. In the case of surface calculations, the Bi-[Formula: see text] and Te-[Formula: see text] states at the edges of the bulk band gap and their inversion at the TPT point are transformed into the TSSs with an energy gap at the DP. In this case the TPT takes place without closing the band gap, i.e. with a "jump" through zero and the formation of the nonzero gap during such a transition. Our calculations show that the TPT point is also characterized by an inversion of the out-of-plane spin polarization [Formula: see text] at the [Formula: see text] point for lower and upper parts of the Dirac cone and a significant spatial redistribution of the TSSs between the surface and the bulk. We suppose that the nonzero Dirac gap can have some relationship with the formation of the axion-like state, which presumably couples nonmagnetic spin-orbit and magnetic contributions at the boundary between the topological and trivial phases for a system with parameters close to the TPT conditions. A practically realized system is proposed - the AFM TI with a stoichiometry close to that of MnBi[Formula: see text]Te[Formula: see text]Se[Formula: see text] with partial (about 50%) substitution of Te atoms for Se atoms in MnBi[Formula: see text]Te[Formula: see text] which can be an experimental platform for the implementation and experimental analysis of the TPT and the corresponding possibility of the axion-like state realization in Condensed Matter. Besides, such system could serve as a good platform for studying the dynamic axion effect, where the axion field fluctuations are maximised when a small external field is applied to the system which state is close to the TPT.

Collective excitations in magnetic topological insulators and axion dark matter search

Collective excitations in magnetic topological insulators and axion dark matter search

Dynamical axion field in topological magnetic insulators

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Tunable dynamical magnetoelectric effect in antiferromagnetic topological insulator MnBi2Te4 films

Detecting axion dynamics on the surface of magnetic topological insulators

Topological Axion States in the Magnetic Insulator MnBi_{2}Te_{4} with the Quantized Magnetoelectric Effect.

Dynamical Axion Field in a Magnetic Topological Insulator Superlattice

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Dynamical Axion State with Hidden Pseudospin Chern Numbers in MnBi_2Te_4-based Heterostructures

Axion quasiparticles for axion dark matter detection

Giant nonlocal edge conduction in the axion insulator state of MnBi2Te4

Dynamical Magnetoelectric Coupling in Axion Insulator Thin Films

Dynamical Magnetoelectric Effect in Antiferromagnetic Insulator Mn$_2$Bi$_2$Te$_5$

Quantum decoherence by magnetic fluctuations in a candidate axion insulator

Axion Insulator State in Hundred-Nanometer-Thick Magnetic Topological Insulator Sandwich Heterostructures

Magnetic Resonance Induced Pseudoelectric Field and Giant Current Response in Axion Insulators

Topological phase transition in the antiferromagnetic topological insulator MnBi[Formula: see text]Te[Formula: see text] from the point of view of axion-like state realization