Abstract:By using the pulsed-laser-ablation technique, we have successfully grown the La$_{3}$Ni$_{2}$O$_{7-\delta}$ thin films with $c$-axis orientation perpendicular to the film surface. X-ray diffraction shows that the (00l) peaks can be well indexed to the La$_{3}$Ni$_{2}$O$_{7-\delta}$ phase. Resistive measurements show that the samples can be tuned from weak insulating to metallic behavior through adjusting the growth conditions. Surprisingly, all curves of $\rho-T$ in the temperature region of 2$\sim$300~K do not show the anomalies corresponding to either the spin density wave or the charge density wave orders as seen in bulk samples. Hall effect measurements show a linear field dependence with the dominant hole charge carriers, but the Hall coefficient $R_{H}=\rho_{xy}/H$ exhibits strong temperature dependence. The magnetoresistance above about 50~K is positive but very weak, indicating the absence of multiband effect. However, a negative magnetoresistance is observed at low temperatures, which shows the delocalization effect. Detailed analysis on the magnetoresistance suggests that the delocalization effect at low temperatures is due to the Kondo-like effect, rather than the Anderson weak localization. Our transport results suggest that, the electronic conduction is fulfilled by the $d_{x^{2}-y^{2}}$ orbital with holes as the dominant charge carriers, while the interaction through Hund's coupling with the localized $d_{z^{2}}$ orbital plays an important role in the charge dynamics.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the electronic structure and transport properties of La$_3$Ni$_2$O$_{7 - \delta}$ thin films, especially whether they exhibit different physical properties from bulk materials under normal pressure. Specifically, the researchers focus on the following aspects: 1. **Growth and characterization of high - quality La$_3$Ni$_2$O$_{7 - \delta}$ thin films**: La$_3$Ni$_2$O$_{7 - \delta}$ thin films with the c - axis orientation perpendicular to the film surface were successfully prepared by pulsed - laser deposition (PLD) technology, and their structures were characterized by means such as X - ray diffraction (XRD). 2. **Change of resistivity with temperature**: It was found that by adjusting the growth conditions, the sample could be transformed from a weakly insulating state to a metallic state. The ρ - T curves of all samples in the temperature range from 2 to 300 K did not show anomalies related to spin - density - wave (SDW) or charge - density - wave (CDW), which is different from bulk materials. 3. **Hall effect measurement**: The Hall resistance ρ$_{xy}$ shows a linear dependence on the magnetic field, indicating that holes are the main carriers, but the Hall coefficient R$_H$ = ρ$_{xy}$/H shows a strong temperature dependence. 4. **Magnetoresistance behavior**: The positive magnetoresistance above 50 K is very weak, while a negative magnetoresistance was observed at low temperatures, indicating the existence of a delocalization effect. A detailed analysis shows that the delocalization effect at low temperatures is caused by a Kondo - like effect, rather than Anderson weak localization. 5. **Dominant orbital contribution**: Studies have shown that electron conduction is mainly carried out by holes in the d$_{x^2 - y^2}$ orbital, and the interaction with the localized d$_{z^2}$ orbital through Hund coupling plays an important role in charge dynamics. ### Formula summary - Hall coefficient: \[ R_H=\frac{\rho_{xy}}{H} \] - Definition of magnetoresistance: \[ \Delta\rho = \rho(H)-\rho_0 \] - Fitting formula for low - temperature resistivity: \[ \rho(T)=\rho_0 + aT^2+\rho_K(T) \] where the Kondo scattering term is: \[ \rho_K(T)=\rho_{K0}\left[1 - \frac{\ln\left(\frac{T}{T_K}\right)}{\sqrt{\ln^2\left(\frac{T}{T_K}\right)+S(S + 1)\pi^2}}\right] \] - Relationship between magnetoresistance and Brillouin function: \[ \left|\frac{\Delta\rho}{\rho_0}\right|^{1/2}=\lambda B_S\left(\frac{gS\mu_B B}{k_B T}\right) \] Through these studies, the authors hope to reveal the unique physical properties of La$_3$Ni$_2$O$_{7 - \delta}$ thin films under normal pressure and provide experimental evidence for further exploring the high - temperature superconductivity mechanism of nickelates.

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