Abstract:Altermagnets is a class of antiferromagnetic materials which has electron bands with lifted spin degeneracy in momentum space but vanishing net magnetization and no stray magnetic fields. Because of these properties, altermagnets have attracted much attention for potential use in spintronics. We here show that despite the absence of bulk magnetization, the itinerant electrons in altermagnets can generate a magnetization close to edges and vacuum interfaces. We find that surface-induced magnetization can also occur for conventional antiferromagnets with spin-degenerate bands, where the magnetization from the itinerant electrons originates from a subtle yet nonvanishing redistribution of the probability density on the unit-cell level. An intuitive explanation of this effect in a phenomenological model is provided. In the altermagnetic case, the induced magnetization has a different spatial dependence than in the antiferromagnetic case due to the anisotropy of the spin-polarized Fermi surfaces, causing the edge-induced Friedel oscillations of the spin-up and -down electron densities to have different periods. We employ both a low-energy effective continuum model and lattice tight-binding calculations. Our results have implications for the usage of altermagnets and antiferromagnets in nanoscale spintronic applications.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the interface - induced magnetization phenomenon in altermagnets and antiferromagnets. Specifically, although these materials have no net magnetization in the bulk phase (i.e., they do not exhibit magnetism as a whole), they can generate local magnetization near the edges or vacuum interfaces. The paper explores the mechanism of this phenomenon and its impact on nano - scale spintronics applications through theoretical models and computational methods.
### Main research questions:
1. **Interface effect**: How can local magnetization be generated due to the existence of the interface in altermagnets and antiferromagnets without bulk - phase magnetization?
2. **Magnetization mechanism**: How is this interface - induced magnetization formed? In particular, in altermagnets, due to the anisotropy of the spin - polarized Fermi surface, the Friedel oscillation periods of different spin states are different, resulting in magnetization.
3. **Application prospects**: What are the potential impacts of this interface magnetization on nano - scale spintronics applications?
### Research background:
- **Altermagnets**: A class of antiferromagnetic materials whose energy bands have the characteristic of lifting spin degeneracy in momentum space, but have no net magnetization and scattering magnetic field as a whole. This makes altermagnets have potential application value in spintronics.
- **Antiferromagnets**: Traditional antiferromagnetic materials have a spin - degenerate energy band structure, but under specific conditions, the interface can break this symmetry, resulting in local magnetization.
### Main findings of the paper:
1. **Interface magnetization in altermagnets**: Even in the absence of bulk - phase magnetization, altermagnets can generate non - zero magnetization near the edges or interfaces. This magnetization is mainly caused by the anisotropy of the spin - polarized Fermi surface, resulting in different Friedel oscillation periods of different spin states.
2. **Interface magnetization in antiferromagnets**: Traditional antiferromagnets can also generate local magnetization at the interface, although their bulk - phase energy bands are spin - degenerate. This magnetization originates from the redistribution of the electron wave function near the interface.
3. **Theoretical models**: The paper uses the low - energy effective continuum model and the lattice tight - binding model to analyze these phenomena. The continuum model can capture the key physical mechanisms, while the tight - binding model provides more detailed lattice structure information.
### Conclusions:
- Altermagnets and antiferromagnets can generate local magnetization at the interface, and this phenomenon is of great significance for nano - scale spintronics applications.
- This interface magnetization provides new possibilities for designing new spintronic devices, especially in cases where high - density integration is required and interference with neighboring components is not desired.
### Formulas and models:
- **Low - energy effective continuum model**:
- Hamiltonian of altermagnets:
\[
H(k)=\frac{k^{2}}{2m}-\mu+\sigma_{z}\frac{1}{2m}(t_{1}(k_{x}^{2}-k_{y}^{2}) + 2t_{2}k_{x}k_{y})
\]
- Hamiltonian of antiferromagnets:
\[
H_{\text{AFM}}(k)=\epsilon_{0}\sqrt{\frac{J_{\text{sd}}^{2}+\epsilon_{0}^{2}k^{2}}{2m}}-\left(\mu+\sqrt{J_{\text{sd}}^{2}+\epsilon_{0}^{2}}\right)
\]
- **Lattice tight - binding model**:
- Hamiltonian:
\[
H=-t\sum_{\langle i,j\rangle,\sigma}c_{i,\sigma}^{\dagger}c_{j,\sigma}-J_{\text{sd}}\sum_{i,\sigma,\sigma'}(\mathbf{S}_{i}\cdot\boldsymbol{\sigma})_{\sigma\sigma'}c_{i,\sigma}^{\dagger}c_{i,\sigma'}-\sum_{i,\sigma}(\mu-\delta_{i,i})
\]