Pushing an Altermagnet to the Ultimate 2D Limit: Evidence of Symmetry Breaking in Monolayers of GdAlSi

Oleg E. Parfenov,Dmitry V. Averyanov,Ivan S. Sokolov,Alexey N. Mihalyuk,Oleg A. Kondratev,Alexander N. Taldenkov,Andrey M. Tokmachev,Vyacheslav G. Storchak

2024-06-11

Abstract:Altermagnets have emerged as a class of materials combining certain ferromagnetic properties with zero net magnetization. This combination is highly promising for spintronics, especially if a material can be brought to a nanoscale size. However, experimental studies of the 2D limit of altermagnets and evolution of their properties with thickness are lacking. Here, we study epitaxial films on silicon of the Weyl altermagnet GdAlSi ranging from more than a hundred unit cells to a single unit cell. The films are synthesized by molecular beam epitaxy and, expectedly, do not show any discernible net magnetic moments. Electron transport studies reveal a remarkable transformation of the electron state with the film thickness. Thick films exhibit negative longitudinal magnetoresistance associated with the chiral anomaly but do not demonstrate altermagnetic properties in electron transport due to symmetry restrictions. In ultrathin films, a spontaneous anomalous Hall effect manifests itself, indicating a non-relativistic spin splitting in the electronic structure. The transformation is associated with crystal symmetry breaking accompanying the 3D-to-2D crossover. The work highlights the role of dimensionality in altermagnetism and provides a platform for studies of altermagnets aiming at ultra-compact spintronics.

Materials Science

What problem does this paper attempt to address?

The paper primarily explores the changes in properties of gadolinium aluminum silicon (GdAlSi) material in the two-dimensional limit, particularly its unique properties as an "altermagnet." GdAlSi is a special material that combines characteristics of some ferromagnetic materials (such as spin polarization) with those of antiferromagnetic materials (such as zero net magnetization), making it potentially valuable in fields like spintronics.

The core issue of the research is to explore the changes in physical properties of GdAlSi thin films during the transition from three-dimensional to two-dimensional, with a particular focus on the characteristics transformation in the ultrathin layer state. Specifically, the researchers synthesized GdAlSi thin films of different thicknesses using molecular beam epitaxy and conducted detailed characterization and analysis of these films.

In thicker films (simulating the properties of bulk materials), GdAlSi exhibits a negative longitudinal magnetoresistance effect, which is believed to be caused by the chiral anomaly in topological semimetals. However, the characteristic anomalous Hall effect (AHE) of altermagnets was not observed in these thicker films due to the restriction of crystal symmetry preventing this phenomenon.

As the film thickness decreases to a single unit layer, a series of significant changes were discovered. Most notably, the emergence of spontaneous anomalous Hall effect indicates a non-relativistic spin splitting phenomenon. Additionally, as the film transitions from three-dimensional to two-dimensional, the chiral anomaly effect gradually disappears, while the negative magnetoresistance effect reappears in the ultrathin films. These changes are attributed to the breaking of crystal symmetry and the resulting transformation of electronic states.

In summary, the main objective of this paper is to study the changes in properties of GdAlSi material in the two-dimensional limit, with a particular focus on its physical properties in the ultrathin film state, including electronic structure, magnetism, and electrical transport properties. These findings are significant for understanding the fundamental physical mechanisms of altermagnets and their applications at the nanoscale.