Abstract:The structural, electronic, and dielectric (optical) properties of graphene-like 2D MgO monolayer have been explored through first-principles calculations under bi-axial tensile and compressive mechanical strain within a range of -10% to +10%. Our findings revealed that the pristine MgO monolayer is an indirect band gap semiconducting material and the semiconducting mature of MgO monolayer remains consistent under both compressive and tensile mechanical strain. This nature of MgO is confirmed through partial density of states (PDOS) as well as electronic band structure. PDOS exhibits the contribution of different atomic orbitals in bond formation and nature of bond, while band structure provides insight into electron transitions between energy levels of valance and conduction bands. All optical parameters (dielectric function, reflectivity, energy loss, refractive index, extinction coefficient and absorption) are plotted in an energy range 0-15 eV. Within this energy interval, MgO possesses the highest value of the refractive index (2.13) at 3.12 eV energy. Also, a detailed analysis of changes in the geometrical structure of MgO monolayer is provided.

What problem does this paper attempt to address?

This paper aims to study the changes in the structural, electronic, and optical properties of two - dimensional magnesium oxide (MgO) monolayers under biaxial mechanical strain conditions. Specifically, through first - principles calculations, the authors explored the changes in the geometric structure, electronic band structure, and optical parameters of 2D MgO monolayers within the biaxial tensile and compressive strain range from - 10% to + 10%. ### Main research questions: 1. **Structural properties**: - Explore the changes in lattice parameters, bond lengths, and bond angles of 2D MgO monolayers under different strain conditions. - Analyze the influence of strain on the in - plane atomic arrangement of MgO monolayers. 2. **Electronic properties**: - Study the band structure and partial density of states (PDOS) of 2D MgO monolayers under different strain conditions. - Confirm the semiconductor characteristics of MgO monolayers under strain conditions and their band - gap types (direct or indirect). 3. **Optical properties**: - Analyze optical parameters such as dielectric function, reflectivity, energy loss, refractive index, extinction coefficient, and absorption coefficient of 2D MgO monolayers under different strain conditions. - Explore the influence of strain on these optical parameters, especially the changes in the energy range from 0 to 15 eV. ### Research methods: - **Calculation method**: Use the generalized gradient approximation (GGA) and Perdew - Burke - Ernzerhof (PBE) exchange - correlation functionals in density functional theory (DFT) for calculations. - **Software tool**: Employ the Quantum Espresso software package for calculations. - **Calculation parameters**: Set the kinetic energy cutoff to 800 eV, use a 5×5×1 Monkhorst - Pack k - point grid, and set the vacuum layer thickness to 15 Å to avoid interactions between periodic images. ### Main findings: - **Structural properties**: As the strain increases, the bond length of the MgO monolayer changes. Negative strain leads to a decrease in bond length, and positive strain leads to an increase in bond length. - **Electronic properties**: The 2D MgO monolayer has an indirect band gap under strain - free conditions and maintains its semiconductor characteristics under different strain conditions. Strain has a significant impact on the band - gap width. Positive strain leads to a decrease in the band gap, and negative strain leads to an increase in the band gap. - **Optical properties**: Strain has a significant impact on the optical properties of the MgO monolayer. For example, the refractive index reaches a maximum at a specific energy, and the absorption coefficient and reflectivity also show different trends with the change of strain. ### Conclusion: This study systematically analyzes the structural, electronic, and optical properties of 2D MgO monolayers under biaxial mechanical strain conditions, providing an important theoretical basis for future applications in the field of optoelectronics.

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