Intrinsic piezoelectricity of PZT

Desheng Fu,Seiji Sogen,Hisao Suzuki

2024-08-23

Abstract:An unresolved issue in the commonly used Pb(Zr1-xTix)O3 (PZT) ceramics is understanding the intrinsic piezoelectric behaviors of its crystal around the morphotropic phase boundary (MPB). Here, we demonstrate a novel approach to grow c-axis oriented PZT around MPB on stainless steel SUS430, allowing us to estimate the intrinsic piezoelectric and ferroelectric properties of PZT along its polar axis. The piezoelectric coefficient d33 and spontaneous polarization Ps were found to be 46.4 +- 4.4 pm/V, 88.7+-4.6 uC/cm2, respectively, for x = 0.47 close to MPB. These values align well with the predicted values of d33 = 50 - 55 pC/N and Ps=79 uC/cm2 at room temperature from the first-principles-derived approach. The obtained d33 is 4 times smaller than that of its ceramics, indicating that the large piezoelectric response in the PZT ceramics around MPB is primarily driven by extrinsic effects rather than intrinsic ones. In the technical application of PZT films, achieving a substantial piezoelectric response requires careful consideration of these extrinsic effects.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the intrinsic piezoelectric behavior of crystals near the morphotropic phase boundary (MPB) in PZT (lead zirconate titanate) ceramics. Specifically, the researchers focus on how to accurately estimate the intrinsic piezoelectric and ferroelectric properties of PZT along its polar axis direction, especially the behavior when PZT is close to MPB. For a long time, this problem has been difficult to answer due to the lack of high - quality PZT single crystals, resulting in a large difference between theoretical predictions and experimental results.

By developing a method to grow c - axis - oriented tetragonal PZT thin films on a stainless - steel SUS430 substrate, the paper has successfully solved the above - mentioned problems. This method enables researchers to directly measure the intrinsic piezoelectric coefficient \(d_{33}\) and spontaneous polarization \(P_s\) of PZT near MPB. The experimental results show that for PZT with \(x = 0.47\) (close to MPB), its piezoelectric coefficient \(d_{33}\) is \(46.4\pm4.4 \, \text{pm/V}\), and the spontaneous polarization \(P_s\) is \(88.7\pm4.6 \, \mu\text{C/cm}^2\). These values are in very good agreement with the predicted values \(d_{33} = 50\sim55 \, \text{pC/N}\) and \(P_s = 79 \, \mu\text{C/cm}^2\) calculated based on first - principles.

In addition, the study also found that the high piezoelectric response exhibited by PZT ceramics near MPB is mainly driven by extrinsic effects, rather than the intrinsic lattice response. These extrinsic effects include domain - wall movement, phase coexistence and phase transformation, and inter - and intra - grain strain effects. These mechanisms significantly amplify the piezoelectric response in polycrystalline PZT ceramics, especially the elastic strain generated during non - 180° domain switching.

In summary, this paper experimentally verifies the intrinsic piezoelectric behavior of PZT near MPB and reveals the main reasons for the high piezoelectric response of PZT ceramics, providing an important scientific basis for optimizing the piezoelectric properties of PZT materials.