Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

C. K. Safeer,Paul S. Keatley,Witold Skowroński,Jakub Mojsiejuk,Kay Yakushiji,Akio Fukushima,Shinji Yuasa,Daniel Bedau,Fèlix Casanova,Luis E. Hueso,Robert J. Hicken,Daniele Pinna,Gerrit van der Laan,Thorsten Hesjedal

2024-05-09

Abstract:Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to understand the transmission characteristics of magnetic tunnel junctions (MTJs) under high - frequency conditions, especially the influence of displacement current on magnetization dynamics at GHz frequencies. Specifically, the researchers focus on how to use the displacement current in CoFeB/MgO - based MTJ devices to induce magnetization dynamics, and explore the significance of this effect for the development of spintronic memories and radio - frequency (RF) devices with high - speed operation.

### Research Background and Problem Description

1. **Importance of High - Frequency Transmission Characteristics**
- The transmission characteristics of magnetic tunnel junctions (MTJs) under high - frequency conditions are crucial for the development of fast - operating spintronic memories (such as MRAM) and radio - frequency (RF) devices.
- Traditionally, MTJs mainly rely on the tunnel magnetoresistance effect (TMR), and their electrical properties depend on the relative orientation between magnetic layers, which are widely used in the data reading and writing processes.

2. **Existing Challenges**
- At GHz frequencies, there is a significant displacement current in MTJs. This current does not destroy the MgO tunnel barrier but generates an Oersted field and a spin - orbit torque, thus affecting magnetization dynamics.
- Previous studies have not fully explored the specific influence of displacement current on magnetization dynamics under high - frequency conditions and its potential applications.

### Core Contributions of the Paper

- **Experimental Findings**
- Through the time - resolved magneto - optical Kerr effect (TR - MOKE) technique, the researchers observed that there is a significant displacement current (on the order of mA) in CoFeB/MgO - based MTJ devices at GHz frequencies, and this current does not destroy the MgO barrier.
- The displacement current can generate sufficient Oersted fields and spin - orbit torques to induce magnetization dynamics.

- **Theoretical Explanation**
- The impedance characteristics of MTJs under high - frequency conditions are explained using the RC circuit model. As the frequency increases, the total impedance decreases, resulting in a significant increase in current.
- It is represented by the formula:
\[
Z=\frac{1}{\sqrt{\left(\frac{1}{R}\right)^2+(2\pi f C)^2}}
\]
where \( R \) is the resistance, \( C \) is the capacitance, and \( f \) is the frequency. For a parallel - plate capacitor, the capacitance \( C \) can be expressed as:
\[
C = \frac{2\epsilon_0\epsilon_r A}{d}
\]
where \( \epsilon_0 \) is the vacuum permittivity, \( \epsilon_r \) is the relative permittivity, \( A \) is the area of the MTJ pillar, and \( d \) is the thickness of MgO.

- **Practical Application Prospects**
- This finding provides new ideas for the development of MTJ devices that can operate stably under high - current conditions.
- It emphasizes the importance of considering capacitive impedance when analyzing high - frequency magnetic transport data.

### Summary

The main objective of the paper is to reveal the influence of displacement current on MTJ magnetization dynamics under high - frequency conditions and show its potential applications in spintronics and RF devices. Through the combination of experiments and theory, the researchers not only discovered the significant displacement current effect but also proposed a reasonable physical mechanism explanation, laying the foundation for future research and applications.