Probing the Spin-Momentum Locking in Rashba Surfaces via Spin Current

J. E. Abrão,E. Gomes da Silva,G. Rodrigues-Junior,J. B. S. Mendes,A. Azevedo

2024-04-23

Abstract:In this work, we explore the intriguing spin-momentum locking phenomenon within the Rashba states of antimony (Sb) films. By combining spin pumping with the flow of an external charge current, we reveal the topological properties of surface states in Sb films. Taking advantage of the well-defined spin polarization of both spin-momentum-locked charge currents and spin-pumped currents, we demonstrate precise manipulation over the direction and magnitude of the resulting charging current, generated through the inverse Rashba-Edelstein effect. This fascinating phenomenon is attributed to the dynamic interaction between the accumulation of out-of-equilibrium pumped spins and the flowing spins, intrinsically locked perpendicular to the direction of the charge current. The results show that Sb as a promising material for basic and applied investigation of spintronics phenomena. We believe that the nanostructures investigated here open the way for the development of low-power logic gates operating in the range of a few tens of microamperes.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the spin - momentum locking phenomenon in the surface states of antimony (Sb) thin films, and to reveal the topological properties of these surface states by combining spin pumping and the flow of external charge currents. Specifically, the researchers hope to experimentally verify the following points:

1. **Spin - momentum locking phenomenon**: The researchers aim to verify whether the spin - momentum locking phenomenon exists on the Rashba surface and whether this phenomenon can be detected and manipulated by experimental means.

2. **Spin - to - charge conversion mechanism**: The researchers hope to understand and verify the performance of the inverse Rashba - Edelstein effect (IREE) in this material, especially how to precisely control the direction and intensity of the charge current generated by this effect through the external charge current.

3. **Feasibility of low - power - consumption logic devices**: The researchers explore the possibility of developing low - power - consumption logic gates using this material and effect, especially the operation in the micro - ampere - level current range.

### Main problem decomposition

- **Existence of spin - momentum locking**: Confirm through experiments whether the Sb thin film has surface states and whether these surface states exhibit spin - momentum locking characteristics.

\[
\text{Spin - momentum locking} \implies \text{The spin direction of electrons is locked with their momentum direction}
\]

- **Spin - to - charge conversion**: The researchers introduce an external charge current and observe its influence on the spin - pumping signal to verify the existence and characteristics of the inverse Rashba - Edelstein effect.

\[
J_{\text{C}}=\frac{e\alpha_R}{\hbar}(\hat{z} \times S_{\text{neq}})
\]
where \(J_{\text{C}}\) is the generated charge current, \(e\) is the elementary charge, \(\alpha_R\) is the Rashba coefficient, \(\hbar\) is the reduced Planck constant, \(\hat{z}\) is the direction of the symmetry - breaking field, and \(S_{\text{neq}}\) is the non - equilibrium spin density.

- **Application potential of low - power - consumption logic devices**: The researchers show that by changing the polarity and magnitude of the external current, the intensity and direction of spin - to - charge conversion can be precisely controlled, thus providing theoretical and experimental bases for the development of low - power - consumption logic devices.

### Experimental methods and results

The researchers used YIG/Sb/Py and YIG/Sb/Ti heterostructures as experimental samples. Through spin - pumping - driven ferromagnetic resonance (SP - FMR) measurements, combined with the application of external charge currents, they studied in detail the spin - momentum locking phenomenon and its influence on spin - to - charge conversion. The experimental results show that:

- The Sb thin film does have surface states, and these surface states exhibit spin - momentum locking characteristics.
- The application of the external charge current significantly enhances the spin - pumping signal, and the signal polarity can be reversed by changing the current direction.
- This enhancement and reversal phenomenon can be explained by the inverse Rashba - Edelstein effect, further verifying the existence of this effect.

In summary, this paper experimentally verifies the spin - momentum locking phenomenon in antimony thin films and shows its potential application prospects in low - power - consumption logic devices.