Abstract: Photodetectors with high responsivity, broadband response to mid-infrared range are in a great demand in optical detection area. Topological charge-density-wave (CDW) semimetal materials with high carrier mobility and near zero bandgap provide an emerging route to meet the demand. Here we firstly investigated the photo/magnetic field reshaped CDW melting phenomenon of quasi one dimensional (1D) topological CDW semimetal (TaSe4)2I. Two orders of magnitude of hysteretic resistance variation is achieved due to CDW melting, which can be manipulated by electric, magnetic field or photoexcitation. In situ polarized Raman scattering spectroscopy reveals the concurrent occurrence of both electronic and structural phase transition. Surprisingly, the phase transition could be driven by applying a minimum voltage interval of 10 {\mu}V or a magnetic field interval of 83 Oe at a moderate temperature 120 K. The sharpness of the transition is manifested by single point current jumping (SPCJ). Photodetectors based on this transition has much superior performance than that of quasi two dimensional (2D) TaS2 reported in literature, which is also elaborated by our density functional theory (DFT) calculation. Photoresponsivity at 120 K from visible (405 A/W @ 532 nm) to mid-infrared (31.67 A/W @ 4.73 um) and detectivity (7.2E9 Jones @ 532 nm, 5.6E8 Jones @ 4.73 um) are both one order of magnitude higher than that of TaS2 while the photoresponsivity and detectivity also outperforms commercialized HgCdTe material. Our work not only reveals the important role of dimensionality in CDW phase transition, but also paves a new way for implementing ultrasensitive, broadband photodetector as well as transconductance transistor, memory devices by exploiting quasi-1D topological CDW materials

Multiple charge-density-wave gaps in LaSbTe and CeSbTe as revealed by ultrafast spectroscopy

Charge Density Wave and Weak Kondo Effect in a Dirac Semimetal CeSbTe

Anisotropic Gapping of Topological Weyl Rings in the Charge-Density-wave Superconductor InxTaSe2

Optical Spectroscopy and Ultrafast Pump-Probe Study of a Quasi-One-dimensional Charge Density Wave in CuTe

Ultrasensitive resistance switching and giant photoresponsivity from visible to mid-infrared of quasi one-dimensional Weyl semimetal (TaSe4)2I

Ultrafast decoupling of atomic sublattices in a charge-density-wave material.

Unconventional Spectral Gaps Induced by Charge Density Waves in the Weyl Semimetal (TaSe4)2I

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Revealing Light-Induced Charge Density Wave Melting and Carrier Redistribution in 1T-Tise2

Revealing Extremely Low Energy Amplitude Modes in the Charge-Density-Wave Compound LaAgSb_{2}.

Discovery of a Topological Charge Density Wave

Optical Spectroscopy and Ultrafast Pump-Probe Study on Bi2Rh3Se2 : Evidence for Charge Density Wave Order Formation

Light-induced Charge Density Wave in LaTe3

Effect of Disorder in the Charge-Density-wave Compounds LaTe1.95and CeTe1.95−xSe

Light-Induced Charge Density Wave in LaTe$_3$

Electronic Structure Study of the Charge-Density-wave Kondo Lattice CeTe3

Incoherence-to-coherence Crossover Observed in Charge-Density-wave Material 1T-Tise2

Revealing Multiple Charge-Density-Wave Orders in Tbte3 by Optical Conductivity and Ultrafast Pump-Probe Experiments

Effect of disorder in the charge-density-wave compounds LaTe$_{1.95}$ and CeTe$_{1.95-x}$Se$_x$ (x=0 and 0.16) as revealed by optical spectroscopy

Visualizing $p$-orbital texture in the charge-density-wave state of CeSbTe

Surface Charge Induced Dirac Band Splitting in a Charge Density Wave Material (Tase4)2i