Probing the band splitting near the Γ point in the van der Waals magnetic semiconductor CrSBr

Kaiman Lin,Yi Li,Mahdi Ghorbani-Asl,Zdenek Sofer,Stephan Winnerl,Artur Erbe,Arkady V. Krasheninnikov,Manfred Helm,Shengqiang Zhou,Yaping Dan,Slawomir Prucnal
2024-04-02
Abstract:This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore the electronic band structure of CrSBr (chromium - sulfur - bromide), an A - type antiferromagnetic semiconductor material, at different thicknesses, especially the band - splitting phenomenon. Specifically, through comprehensive photoluminescence (PL) characterization techniques, the researchers identified the optical transitions between two adjacent conduction - band states and two different valence - band states at low temperatures. The focuses of the study are as follows: 1. **Confirming band splitting**: By analyzing PL data, the energy splitting, band gap, and exciton transitions in CrSBr with different thicknesses (from monolayer to bulk material) were revealed. 2. **Temperature dependence**: Through temperature - dependent PL measurements, the stability of band splitting below the Néel temperature was explored, which indicates that magnons coupled with excitons may be the reasons for symmetry breaking and the enhanced transition from the secondary conduction - band minimum (CBM2) to the global valence - band maximum (VBM1). 3. **Universality of band splitting**: The study found that the band splitting at the Γ point is consistent regardless of the thickness of CrSBr, which is crucial for understanding the basic properties of the material and its potential in optoelectronic, spintronic, and quantum - technology applications. In conclusion, this study aims to gain an in - depth understanding of the electronic band structure of CrSBr, especially the band - splitting phenomenon under different thickness and temperature conditions, as well as the physical mechanisms behind these phenomena. This not only helps to reveal the complex interactions among the optical, electronic, and magnetic properties of the material but also provides an important theoretical basis and technical support for future applications.