Phonon-induced band gap renormalization by dielectric dependent global hybrid density functional tight-binding

Tammo van der Heide,Ben Hourahine,Bálint Aradi,Thomas Frauenheim,Thomas A. Niehaus

2024-03-21

Abstract:Accurate electronic bandstructures of solids are indispensable for a wide variety of applications and should provide a sound prediction of phonon-induced band gap renormalization at finite temperatures. We employ our previously introduced formalism of general hybrid functionals within the approximate density functional method, DFTB, to present first insights into the accuracy of temperature dependent band gaps obtained by a dielectric-dependent global hybrid functional. The work targets the prototypical group-IV semiconductors diamond and silicon. Following Zacharias et al. [Phys. Rev. Lett. 115, 177401 (2015)], we sample the nuclear wave function by stochastic Monte-Carlo integration as well as the deterministic one-shot procedure [Phys. Rev. B 94, 075125 (2016)] derived from it. The computational efficiency of DFTB enables us to further compare these approaches, which fully take nuclear quantum effects into account, with classical Born-Oppenheimer molecular dynamic (BOMD) simulations. While the quantum mechanical treatments of Zacharias et al. yield band gaps in good agreement with experiment, calculations based on BOMD snapshots inadequately describe the renormalization effect at low temperatures. We demonstrate the importance of properly incorporating nuclear quantum effects by adapting the stochastic approach to normal amplitudes that arise from the classical equipartition principle. For low temperatures the results thus obtained closely resemble the BOMD predictions, while anharmonic effects become important beyond $500\,\mathrm{K}$. Comparisons between DFTB parametrized from semi-local DFT, and global hybrid DFTB, suggest that Fock-type exchange systematically yields a slightly more pronounced electron-phonon interaction, hence stronger gap renormalization and zero-point corrections.

Computational Physics

What problem does this paper attempt to address?

This paper discusses the temperature dependence of the electronic band gap in semiconductors, particularly the phonon-induced band gap renormalization. The study utilizes a density functional tight-binding method (DFTB) based on global hybrid functionals to evaluate the temperature-dependent band gap and compares the results with quantum mechanics and classical molecular dynamics simulations. The paper focuses on two typical IV-group semiconductor materials, diamond and silicon, emphasizing the importance of properly incorporating nuclear quantum effects and pointing out that the Fock-type exchange energy can affect the electron-phonon interaction, thereby influencing the band gap renormalization and zero-point correction.