Abstract:We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.

What problem does this paper attempt to address?

### What problems does this paper attempt to solve? This paper aims to study the dynamic characteristics of hot - electron field - effect transistor (FET) bolometers based on graphene channels (GC) and composite boron nitride/black phosphorus (h - BN/b - P/h - BN) gate barrier layers (BL). Specifically, the paper focuses on the following issues: 1. **Hot - electron cooling mechanism**: Analyze the energy transfer efficiency of hot electrons between the graphene channel and the side contacts, and the influence of these mechanisms on the response speed of the bolometer. 2. **Modulation frequency optimization**: Explore how to improve the maximum modulation frequency of the bolometer by optimizing device structure parameters (such as geometric dimensions, material band gaps, etc.). 3. **Thermoelectric transport characteristics**: Study the heating and transport processes of hot electrons in the graphene channel, especially the transient heating phenomenon related to THz radiation absorption. 4. **Performance improvement**: Evaluate the high - sensitivity response of GC - FET bolometers with composite gate barrier layers to THz radiation at room temperature, and explore their potential application prospects. ### Specific research content - **Device structure and model equations**: Describe the structure of the GC - FET bolometer and derive the main model equations for calculating the hot - electron temperature change and the thermal current. - **Hot - electron dynamics**: Analyze the heating and cooling processes of hot electrons in the graphene channel, including the mechanisms of energy transfer to the lattice and side contacts. - **Modulation characteristics**: Study the modulation characteristics and the maximum modulation frequency of the bolometer, especially its performance under different structure parameters. - **Comparative analysis**: Compare the performance differences between GC - FET bolometers with composite gate barrier layers and those with uniform gate barrier layers, and verify the advantages of the composite gate barrier layers. ### Main conclusions The paper shows that the hot - electron FET bolometer based on the graphene channel and the composite gate barrier layer has a high - sensitivity response to THz radiation at room temperature, and its maximum modulation frequency can be significantly improved by optimizing the structure parameters. This provides a theoretical basis and technical support for the future development of high - performance THz detectors. ### Mathematical formulas The mathematical formulas involved in the paper are as follows: 1. **Thermal current formula**: \[ \langle \delta J_\omega \rangle = j_{\text{max}} H F \int_{-L_C}^{L_C} dx \frac{\langle \delta T_\omega \rangle}{T_0} \] \[ \langle \delta J_{\omega m \omega} \rangle = j_{\text{max}} H F \int_{-L_C}^{L_C} dx \frac{\langle \delta T_{\omega m \omega} \rangle}{T_0} \] 2. **Thermal conductivity and heat capacity**: \[ c_e = \frac{2\pi^2 T_0}{3\mu} \] \[ h_e = \frac{v_W^2}{2\nu} \] 3. **Boundary conditions**: \[ \langle \delta T_\omega \rangle \bigg|_{x = \pm L} = 0, \quad \langle \delta T_{\omega m \omega} \rangle \bigg|_{x = \pm L} = 0 \] 4. **Electric field intensity**: \[ \langle |\delta E_\omega|^2 \rangle = \frac{16}{g_c} \left| \frac{\gamma_\omega \sin(\gamma_\omega x / L)}{\cos \gamma_\omega} \right|^2 I_\omega \]

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