Direct microwave spectroscopy of Andreev bound states in planar Ge Josephson junctions

M. Hinderling,S. C. ten Kate,M. Coraiola,D. Z. Haxell,M. Stiefel,M. Mergenthaler,S. Paredes,S. W. Bedell,D. Sabonis,F. Nichele
2024-03-06
Abstract:We demonstrate microwave measurements of the Andreev bound state (ABS) spectrum in planar Josephson junctions (JJs) defined in Ge high mobility two-dimensional hole gases contacted by superconducting PtSiGe. The JJs and readout circuitry are located on separate chips and inductively coupled via flip-chip bonding. For a device with $350~\mathrm{nm}$ junction length, spectroscopic signatures were consistent with the short-junction limit, with an induced superconducting gap $\Delta^{*}\approx48~\mathrm{\mu eV}$ and transmission $\tau \approx 0.94$. The interaction between the highest-transmission ABS and the resonator was well described by a Jaynes-Cummings model with a vacuum Rabi splitting of approximately $6~\mathrm{MHz}$. A device with junction length of $1~\mu m$ showed an ABS spectrum consistent with a long junction model. Time-resolved monitoring of the readout resonator in the dispersive regime revealed gate-voltage tunable junction parity fluctuations on the timescale of seconds. Our work indicates a viable path towards hybrid quantum devices based on planar Ge.
Mesoscale and Nanoscale Physics,Superconductivity
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