Abstract:Bernal-stacked bilayer graphene (BLG) provides an ideal basis for gate-controlled, and free of etching, electronic devices. Theoretical modeling of realistic devices is an essential part of research, however, simulations of large-scale BLG devices continue to be extremely challenging. Micrometer-sized systems are predominantly beyond the reach of the commonly used atomistic tight-binding method, while other numerical approaches based on the two dimensional Dirac equation are not straightforward to conduct due to the fermion doubling problem. Here we present an approach based on the continuum model, unharmed by the fermion doubling. The discretization of the BLG continuum Hamiltonian leads to an effective four-band model, with both valleys built-in. We demonstrate its performance with realistic, large-scale systems, and obtain results consistent with experiments and with the tight-binding model, over a broad range of magnetic field.

What problem does this paper attempt to address?

The main problems that this paper attempts to solve are the computational complexity and precision issues encountered by existing methods in simulating large - scale Bernal - stacked bilayer graphene (BLG) devices. Specifically: 1. **Limitations of the atomic - scale tight - binding model**: - For real BLG devices on the scale of several hundred nanometers, it is very computationally expensive to use the atomic - scale tight - binding model for modeling. - Although the scalable model can reduce the computational burden, in AB - stacked BLG, the limited scaling factors required for reliable results make it difficult to simulate more complex devices. 2. **Challenges of methods based on the two - dimensional Dirac equation**: - When performing numerical simulations using the two - dimensional Dirac equation, due to the fermion doubling problem, the discretization process will produce spurious solutions. - To solve this problem, it is usually necessary to add extra dimensions or adopt different discretization schemes, which increases the complexity. ### Proposed solution To overcome the above problems, this paper proposes a discretization scheme based on a continuous model, thereby obtaining an effective four - band model. This model has the following characteristics: - **Avoiding the fermion doubling problem**: Through an appropriate discretization method, the transport properties of BLG can be simulated without introducing spurious solutions. - **Applicable to large - scale systems**: This model can handle large - scale devices in reality and greatly reduces the computational burden, being more efficient compared to atomic - scale methods. - **Including two valleys**: This model takes into account both the K and K' valleys simultaneously, which is very important for simulating phenomena involving two valleys. ### Application examples The authors successfully reproduced some recent experimental results through this model, including: - Integer quantum Hall effect - Magnetic focusing phenomenon - Aharonov - Bohm effect - Klein tunneling phenomenon These results verify the validity and accuracy of this model, indicating that it has significant advantages in simulating real BLG devices. ### Summary By developing a new discretization scheme, this paper solves the computational complexity and precision problems of existing methods in simulating large - scale BLG devices, providing an efficient and accurate simulation tool suitable for studying various BLG - based electronic devices.

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