Tuning charge density wave of kagome metal ScV6Sn6

Changjiang Yi,Xiaolong Feng,Nitesh Kumar,Claudia Felser,Chandra Shekhar

2024-03-05

Abstract:Compounds with a kagome lattice exhibit intriguing properties and the charge density wave (CDW) adds an additional layer of interest to research on them. In this study, we investigate the temperature and magnetic field dependent electrical properties under a chemical substitution and hydrostatic pressure of ScV6Sn6, a non-magnetic charge density wave (CDW) compound. Substituting 5 % Cr at the V site or applying 1.5 GPa of pressure shifts the CDW to 50 K from 92 K. This shift is attributed to the movement of the imaginary phonon band, as revealed by the phonon dispersion relation. The longitudinal and Hall resistivities respond differently under these stimuli. The magnetoresistance (MR) maintains its quasilinear behavior under pressure, but it becomes quadratic after Cr substitution. The anomalous Hall-like behavior of the parent compound persists up to the respective CDW transition under pressure, after which it sharply declines. In contrast, the longitudinal and Hall resistivities of Cr substituted compounds follow a two-band model and originates from the multi carrier effect. These results clearly highlight the role of phonon contributions in the CDW transition and call for further investigation into the origin of the anomalous Hall-like behavior in the parent compound.

Materials Science

What problem does this paper attempt to address?

The paper primarily focuses on the study of charge density wave (CDW) phenomena in the metallic compound ScV6Sn6, which has a kagome lattice structure. Specifically, the paper explores the following aspects:

1. **Effects of Chemical Substitution and Pressure on CDW**: The CDW transition temperature in ScV6Sn6 is adjusted by doping chromium (Cr) at the vanadium (V) site and applying hydrostatic pressure. The results show that both chemical substitution and external pressure can lower the CDW transition temperature from 92K to 50K or even completely suppress it.

2. **Changes in Electronic Transport Properties**: The study investigates the behavior of longitudinal resistivity, magnetoresistance (MR), and Hall resistivity under different conditions. It is found that after Cr doping, the magnetoresistance of the material changes from quasi-linear to quadratic. The original sample maintains quasi-linear MR behavior under pressure, but its anomalous Hall effect (AHE-like) characteristics rapidly decrease near their respective CDW transition temperatures.

3. **Phonon Dispersion Relations and Lattice Parameter Changes**: First-principles calculations are used to analyze the phonon spectra of the material under different pressures. It is found that at higher pressures (around 5GPa), the previously existing imaginary frequency modes at high symmetry points are normalized, indicating a more stable structure under high pressure. The changes in lattice constants with pressure are also discussed in detail.

4. **Origin of the Anomalous Hall Effect**: Although ScV6Sn6 itself does not have magnetic order, it exhibits phenomena similar to the anomalous Hall effect. The study suggests that this phenomenon may originate from hidden magnetism, a ring current mechanism that breaks time-reversal symmetry. When the CDW disappears, this anomalous Hall signal also vanishes.

In summary, this paper aims to reveal the response mechanisms of charge density waves and related electronic properties in ScV6Sn6 to external stimuli (such as chemical doping and pressure) and to explore the potential connection between hidden magnetism and the anomalous Hall effect.