Abstract:Control and manipulation of single charges and their internal degrees of freedom, such as spin, may enable applications in quantum information technology, spintronics and quantum sensing 1 , 2 . Recently, atomically thin semiconductors with a direct bandgap such as group VI-B transition-metal dichalcogenide monolayers have emerged as a platform for valleytronics—the study of the valley degree of freedom of charge carriers to store and control information. They offer optical, magnetic and electrical control of the valley index, which, with the spin, is locked into a robust spin-valley index 3 , 4 . However, because recombination lifetimes of photogenerated excitations in transition-metal dichalcogenides are of the order of a few picoseconds, optically generated valley excitons possess similar lifetimes. On the other hand, the valley polarization of free holes has a lifetime of microseconds 5 – 9 . Whereas progress has been made in optical control of the valley index in ensembles of charge carriers 10 – 12 , valley control of individual charges, which is crucial for valleytronics, remains unexplored. Here we provide unambiguous evidence for localized holes with a net spin in optically active WSe 2 quantum dots 13 – 17 and we initialize their spin-valley state with the helicity of the excitation laser under small magnetic fields. Under such conditions, we estimate a lower bound of the valley lifetime of a single charge in a quantum dot from the recombination time to be of the order of nanoseconds. Remarkably, neutral quantum dots do not exhibit such spin-valley initialization, which illustrates the role of the excess charge in prolonging the valley lifetime. Our work extends the field of two-dimensional valleytronics to the level of single spin- valleys, with implications for quantum information and sensing applications.

Phonon-limited valley life times in single-particle bilayer graphene quantum dots

Long-lived valley states in bilayer graphene quantum dots

Valley relaxation in a single-electron bilayer graphene quantum dot

Ultra-long relaxation of a Kramers qubit formed in a bilayer graphene quantum dot

Probing relaxation times in graphene quantum dots

Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot

Valley pair qubits in double quantum dots of gapped graphene

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

Berry Phase Induced Valley Level Crossing in Bilayer Graphene Quantum Dots

Long valley lifetime of free carriers in monolayer WSe2

Optical control of a single spin-valley in charged WSe$_2$ quantum dots

Optical initialization of a single spin-valley in charged WSe 2 quantum dots

Tuning confined states and valley g-factors by quantum dot design in bilayer graphene

Valley Hall Effect in Two-Dimensional Hexagonal Lattices

Bound State Properties of ABC-stacked Trilayer Graphene Quantum Dots.

Electron–Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots

Spin Relaxation in Single-Layer and Bilayer Graphene

Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings

Hyperfine and spin-orbit coupling effects on decay of spin-valley states in a carbon nanotube

Quantum Confinement of Electron-Phonon Coupling in Graphene Quantum Dots