Synthesis and characterization of rare earth ion doped YVO4 thin film phosphors grown by PLD
Suruchi Sharma,Atul Khanna,Rinku Kumar,Ramesh Chandra
DOI: https://doi.org/10.1007/s10854-024-12979-6
2024-06-24
Journal of Materials Science Materials in Electronics
Abstract:Pulsed laser deposition (PLD) technique was used to grow undoped, Eu-doped, and Sm, Dy, and Er-co-doped YVO 4 thin-film phosphor samples on silica substrates at in situ substrate temperature of 650 °C. The thin films were characterized by grazing incidence X-ray diffraction (GIXRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray, Raman, UV–visible, and photoluminescence (PL) spectroscopic analysis. GIXRD studies confirmed the formation of crystalline tetragonal phase of YVO 4 with unit cell parameters: a = b = 7.10 Å and c = 6.27 Å. FESEM studies showed uniform and dense surface morphology of the samples. The thickness of undoped, Eu-doped, and co-doped films was 164, 434, and 217 nm, respectively, and the average particle size was 112, 122, and 127 nm, respectively. The crystallite size was in range of 31–48 nm. Energy-dispersive X-ray elemental mapping scans confirmed the uniform distribution of rare earth ions on the surface without any agglomeration effects in highly stoichiometric YVO 4 films. The optical band gap energy of the thin-film samples was found to lie in the range of 4.6–4.9 eV and PL studies found strong blue, red, and white light emission from undoped, Eu-doped, and co-doped YVO 4 thin-film samples, respectively, due to an effective energy transfer from the vanadate group to the dopant rare earth ions.
materials science, multidisciplinary,engineering, electrical & electronic,physics, applied, condensed matter