Nonlinear longitudinal current of band-geometric origin in wires of finite thickness

Robin Durand,Louis-Thomas Gendron,Théo Nathaniel Dionne,Ion Garate

2024-02-22

Abstract:The miniaturization of integrated circuits is facing an obstruction due to the escalating electrical resistivity of conventional copper interconnects. The underlying reason for this problem was unveiled by Fuchs and Sondheimer, who showed that thinner wires are more resistive because current-carrying electrons encounter the rough surfaces of the wire more frequently therein. Here, we present a generalization of the Fuchs-Sondheimer theory to Dirac and Weyl materials, which are candidates for next-generation interconnects. We predict a nonlinear longitudinal electric current originating from the combined action of the Berry curvature and non-specular surface-scattering.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: With the miniaturization of integrated circuits, traditional copper interconnect materials face the problem of increasing resistivity. Specifically, when the wires become thinner, the electrons carried by the current encounter the rough parts on the wire surface more frequently, resulting in an increase in resistance. This problem was first revealed by Fuchs and Sondheimer.

To solve this problem, the authors extended the Fuchs - Sondheimer theory to Dirac and Weyl materials with non - zero electron Berry curvature, which are considered as candidates for the next - generation interconnect materials. They predicted a non - linear longitudinal current originating from the combined effect of Berry curvature and non - specular surface scattering.

### Specific Problem Description

1. **Resistivity Problem of Traditional Copper Interconnect Materials**:
- As the wires become thinner, the frequency of contact between the electrons carried by the current and the rough parts on the wire surface increases, resulting in an increase in resistivity.
- This phenomenon is particularly evident in thinner wires and limits the further miniaturization of integrated circuits.

2. **Search for New Interconnect Materials**:
- Researchers are striving to find new interconnect materials that can replace copper to overcome the above - mentioned problem of increasing resistivity.
- Topological materials are considered to have potential because of their robust and highly conductive surface states.

3. **Extension of the Fuchs - Sondheimer Theory**:
- The theory of Fuchs and Sondheimer explains the phenomenon of increasing resistivity in traditional wires, but does not involve materials with non - zero Berry curvature.
- The authors extended this theory by introducing Berry curvature and non - specular scattering effects to make it applicable to Dirac and Weyl materials.

4. **Prediction of New Physical Phenomena**:
- The authors predicted a new type of non - linear longitudinal current, which has a quadratic relationship under the applied electric field and is mainly concentrated near the surface of the wire.
- This current is different from the known non - linear Hall effect and originates from the combined effect of Berry curvature and non - specular scattering.

### Summary of Mathematical Formulas

- **Boltzmann Equation**:
\[
\dot{\mathbf{r}}_{\chi} \cdot \nabla_r f_{\chi}(\mathbf{r})+\dot{\mathbf{p}} \cdot \nabla_p f_{\chi}(\mathbf{r}) = I_{\chi}
\]
where,
\[
\dot{\mathbf{r}}_{\chi}=\mathbf{v}_{\chi}+\frac{\dot{\mathbf{p}} \times \Omega_{\chi}}{\hbar}, \quad \dot{\mathbf{p}}=-e\mathbf{E}
\]
\[
\mathbf{v}_{\chi}=\nabla_p \epsilon_{\chi}, \quad \Omega_{\chi} \text{ is Berry curvature}
\]

- **Current Density**:
\[
j_x(\mathbf{r})=\sum_{\chi} j_{\chi,x}(\mathbf{r})=-e \sum_{\chi} \int \frac{d^d p}{(2\pi\hbar)^d} \dot{x}_{\chi} f_{\chi}(\mathbf{r})
\]

- **Non - linear Conductivity**:
\[
j_x=\frac{1}{a} \int_{-a/2}^{a/2} dz \, j_x(z) \approx \sigma_1 E_x+\sigma_2 E_x^2
\]

Through these studies, the authors hope to find a new mechanism to reduce the resistivity of the next - generation interconnect materials, thereby promoting the further miniaturization of integrated circuits.