Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer

Binh Duong Nguyen,Johannes Steiner,Peter Wellmann,Stefan Sandfeld
2024-02-21
Abstract:Detecting and analyzing various defect types in semiconductor materials is an important prerequisite for understanding the underlying mechanisms as well as tailoring the production processes. Analysis of microscopy images that reveal defects typically requires image analysis tasks such as segmentation and object detection. With the permanently increasing amount of data that is produced by experiments, handling these tasks manually becomes more and more impossible. In this work, we combine various image analysis and data mining techniques for creating a robust and accurate, automated image analysis pipeline. This allows for extracting the type and position of all defects in a microscopy image of a KOH-etched 4H-SiC wafer that was stitched together from approximately 40,000 individual images.
Computer Vision and Pattern Recognition,Materials Science,Machine Learning
What problem does this paper attempt to address?
This paper aims to address the automation problem of defect analysis in silicon carbide (SiC) semiconductor materials. By combining unsupervised and supervised learning, the paper constructs a powerful automatic image analysis pipeline for detecting and analyzing different types of defects in microscope images, particularly dislocations on KOH-etched 4H-SiC wafers. This method can handle large amounts of experimental data, extract and locate all types and positions of defects, thus improving the efficiency and accuracy of defect analysis.