Abstract:We present optimized tight-binding models with atomic orbitals to improve \textit{ab initio} tight-binding models constructed by truncating full density functional theory (DFT) Hamiltonian based on localized orbitals. Retaining qualitative features of the original Hamiltonian, the optimization reduces quantitative deviations in overall band structures between the \textit{ab initio} tight-binding model and the full DFT Hamiltonian. The optimization procedure and related details are demonstrated by using semiconducting and metallic Janus transition metal dichalcogenides monolayers in the $2H$ configuration. Varying the truncation range from partial second neighbors to third ones, we show differences in electronic structures between the truncated tight-binding model and the original full Hamiltonian, and how much the optimization can remedy the quantitative loss induced by truncation. We further elaborate the optimization process so that local electronic properties such as valence and conduction band edges and Fermi surfaces are precisely reproduced by the optimized tight-binding model. We also extend our discussions to tight-binding models including spin-orbit interactions, so we provide the optimized tight-binding model replicating spin-related properties of the original Hamiltonian such as spin textures. The optimization process described here can be readily applied to construct the fine-tuned tight-binding model based on various DFT calculations.

What problem does this paper attempt to address?

This paper aims to address the issue of constructing optimized tight-binding models, particularly using ab initio Hamiltonians to improve the tight-binding models obtained from density functional theory (DFT) orbital truncation. The study focuses on monolayer materials of 2H transition metal dichalcogenides. The authors propose an optimization approach that aims to improve the accuracy of the tight-binding model for the overall band structure by retaining the main qualitative features of the original Hamiltonian and reducing the quantitative deviations caused by truncation. They demonstrate the differences in electronic structures under different truncation ranges and ensure that the optimized tight-binding model can accurately replicate local features such as valence and conduction band edges, Fermi surfaces, and spin textures through the optimization process. The paper first introduces the importance of constructing Hamiltonians in studying physical systems and then describes in detail the process of constructing tight-binding models based on DFT calculations, including the truncation and optimization of ab initio tight-binding models. The optimization process aims to determine the model parameters by minimizing the deviations between the target electron bands and the calculated bands of the model. In the study, the authors consider Janus transition metal dichalcogenide monolayers with asymmetric mirror reflection as examples of semiconductor and metallic materials, demonstrating how the optimization process refines the local electronic structures. Additionally, the optimization of tight-binding models including spin-orbit coupling is investigated. By increasing the truncation range, the authors analyze the band structures of different truncation models and discuss how the optimized models improve consistency with DFT calculations. Finally, they extend the optimization method to cases involving spin-orbit interactions and summarize their findings in the conclusion. In summary, this paper addresses the issue of constructing more accurate tight-binding models to better simulate the electronic structures of complex materials.

Construction of optimized tight-binding models using \textit{ab initio} Hamiltonian: Application to monolayer $2H$-transition metal dichalcogenides

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