Reversible optical data storage below the diffraction limit

Richard Monge,Tom Delord,Carlos A. Meriles

DOI: https://doi.org/10.1038/s41565-024-01605-5

2024-02-17

Abstract:Color centers in wide-bandgap semiconductors feature metastable charge states that can be interconverted with the help of optical excitation at select wavelengths. The distinct fluorescence and spin properties in each of these states have been exploited to show storage of classical information in three dimensions, but the memory capacity of these platforms has been thus far limited by optical diffraction. Here, we leverage local heterogeneity in the optical transitions of color centers in diamond to demonstrate selective charge state control of individual point defects sharing the same diffraction-limited volume. Further, we apply this approach to dense color center ensembles, and show rewritable, multiplexed data storage with large areal density. These results portend alternative approaches to information processing in the form of devices with enhanced optical storage capacity.

Optics,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to achieve charge - state control of nitrogen - vacancy (NV) centers in diamond below the optical diffraction limit and demonstrate its potential application in high - density data storage. Specifically:

1. **Charge - state control below the diffraction limit**: Due to the limitation of light diffraction, it is difficult for traditional optical methods to achieve precise charge - state control of a single point defect. By using the differences in optical transitions caused by local heterogeneities (such as strain fields and electric fields), the paper achieves individual charge - state control of multiple NV centers sharing the same diffraction - limited volume.

2. **High - density data storage**: By selectively controlling and reading the charge states in a dense NV ensemble, the paper demonstrates the possibility of multiplexed data storage in the same optical plane. This method can significantly increase the areal density of data storage, thereby enhancing the overall storage capacity of the crystal.

### Main technical means

- **Resonant optical excitation**: Use laser pulses that match the optical transition frequencies of specific NV centers to achieve selective charge - state control of these NV centers.
- **Microwave assistance**: Combine microwave pulses to manipulate the spin states of NV centers, further enhancing the precision and reliability of charge - state control.
- **Super - resolution imaging technology**: Utilize high - resolution imaging techniques (such as Gaussian point - spread - function fitting) to precisely locate and distinguish closely - spaced NV centers.

### Experimental results

- **Charge - state control of a single NV center**: By selectively exciting specific optical transitions, the charge - state control of a single NV center has been successfully achieved, and its repeatability and stability have been verified.
- **Multiplexed data storage of a dense NV ensemble**: In a high - concentration NV ensemble, through frequency - selective excitation and readout, 12 different charge - encoding patterns have been made to coexist on the same crystal plane, demonstrating the potential for high - density data storage.

### Potential applications

- **Data storage**: This technology is expected to be used to develop new high - density, three - dimensional data storage systems with extremely high storage capacity and long data retention time.
- **Quantum information processing**: Precise charge - state control of NV centers is of great significance for fields such as quantum information processing and nano - scale sensing.

In conclusion, by solving the problem of charge - state control below the diffraction limit, this paper provides new technical approaches for high - density data storage and quantum information processing.