Abstract:Josephson junctions constructed from superconductor-quantum dot-superconductor (S-QD-S) heterostructures have been used to realize a variety of voltage-tunable superconducting quantum devices, including qubits and parametric amplifiers. In such devices, the interplay between the charge degree of freedom associated with the quantum dot and its environment must be considered for faithful modeling of circuit dynamics. Here we describe the self-consistent quantization of a capacitively-shunted S-QD-S junction via path-integral formulation. In the effective Hamiltonian, the Josephson potential for the Andreev bound states reproduces earlier results for static phase bias, whereas the charging energy term has new features: (i) the system's capacitance is renormalized by the junction gate voltage, an effect which depends on the strength of the tunneling rates between the dot and its superconducting leads as well, and (ii) an additional charge offset appears for asymmetric junctions. These results are important to understand future experiments and quantum devices incorporating S-QD-S junctions in arbitrary impedance environments.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to accurately describe the quantum - dynamical behavior of superconductor - quantum - dot - superconductor (S - QD - S) Josephson junctions in an arbitrary impedance environment**, especially when there are large phase fluctuations in these junctions. Specifically, the paper focuses on the following points: 1. **Capacitance renormalization**: When the S - QD - S junction is embedded in a general circuit environment, its capacitance will be renormalized. This renormalization depends on the tunneling rate and the gate voltage, and is crucial for understanding future experiments and the design of quantum devices. 2. **Extra charge accumulation**: For asymmetric S - QD - S junctions, extra charge accumulation will occur in the system. These effects not only influence the charging energy term, but also have an important impact on the Josephson potential of Andreev bound states. 3. **Quantum dynamics in a strongly - coupled environment**: Traditional theories are mainly applicable to cases with small phase fluctuations (such as Andreev qubits), but cannot handle environments that support strong phase fluctuations (such as transmon or fluxonium circuits). This paper provides a microscopic theory through the path - integral method, which can handle these complex situations. 4. **Self - consistent quantum - dynamical description**: By introducing the path - integral formula, the authors develop a self - consistent quantum - dynamical model that can describe the behavior of S - QD - S junctions in an arbitrary impedance environment. This includes considering the interaction of charge degrees of freedom between the quantum dot and the superconducting leads. In summary, this research aims to provide a theoretical basis for understanding and designing new - type quantum devices based on S - QD - S junctions, especially those devices that exhibit large - phase - fluctuation characteristics in an arbitrary impedance environment. This work is of great significance for future experimental design and the realization of high - performance quantum gates. ### Key formulas 1. **Renormalized charging energy**: \[ \tilde{E}_C=\frac{e^2}{2(C_\Sigma+\delta C_\Sigma)} \] where \(\delta C_\Sigma\) is the capacitance renormalization term, defined as: \[ \delta C_\Sigma = \left[(C_{cL})^{-1}+(C_{cR})^{-1}\right]^{-1} \] 2. **Total energy shift**: \[ E_{\text{cont}}(\phi)=\sum_{i = L,R}U_{ci}+U_c(\phi) \] where \(U_{ci}\) and \(U_c(\phi)\) are given by the continuum - state contribution and the static part respectively. 3. **Effective Josephson energy**: \[ E_{J,\text{eff}}\approx\frac{\Delta}{\zeta}+\Gamma\sqrt{\frac{\Gamma_L\Gamma_R}{\Gamma^2+\epsilon_g^2\zeta^2/\Delta^2}} \] These formulas show the key dependence relationships of capacitance renormalization, energy shift, and effective Josephson energy, which are crucial for understanding and designing quantum devices based on S - QD - S junctions.

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