Gaining insight into molecular tunnel junctions with a pocket calculator without I-V data fitting. Five-thirds protocol

Ioan Baldea

DOI: https://doi.org/10.1039/D4CP00217B

2024-02-16

Abstract:The proposed protocol is an attempt to meet the experimentalists' legitimate desire of reliably and easily extracting microscopic parameters from current-voltage measurements on molecular junctions. It applies to junctions wherein charge transport dominated by a single level (molecular orbital, MO) occurs via off-resonant tunneling. The recipe is simple. The measured current-voltage curve $I = I(V)$ should be recast as a curve of $V^{5/3}/I$ versus $V$. This curve exhibits two maxima: one at positive bias ($V = V_{p+}$), another at negative bias ($V = V_{p-}$). The values $V_{p +} > 0$ and $V_{p -} < 0$ at the two peaks of the curve for $V^{5/3}/I$ at positive and negative bias and the corresponding values $I_{p +} = I(V_{p+}) > 0$ and $I_{p -} = I(V_{p-}) < 0$ of the current is all information needed as input. The arithmetic average of $V_{p +}$ and $\vert V_{p -}\vert$ in volt provides the value in electronvolt of the MO energy offset $\varepsilon_0 = E_{MO} - E_F$ relative to the electrode Fermi level ($\vert \varepsilon_0\vert = e (V_{p +} + \vert V_{p -}\vert )/2$). The value of the (Stark) strength of the bias-driven MO shift is obtained as $\gamma = (4/5) (V_{p +} - \vert V_{p -} \vert) / (V_{p +} + \vert V_{p -} \vert) $. Even the low-bias conductance estimate, $ G = (3/8) (I_{p +} / V_{p +} + I_{p -} / V_{p -})$, can be a preferable alternative to that deduced from fitting the $I$-$V$ slope in situations of noisy curves at low bias. To demonstrate the reliability and the generality of this ``five-thirds'' protocol, I illustrate its wide applicability for molecular tunnel junctions fabricated using metallic and nonmetallic electrodes, molecular species possessing localized $\sigma$ and delocalized $\pi$ electrons, and} various techniques (mechanically controlled break junctions, STM break junctions, conducting probe AFM junctions, and large area junctions).

Mesoscale and Nanoscale Physics,Chemical Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to reliably and simply extract microscopic parameters from current - voltage (I - V) measurements of molecular junctions without performing complex I - V data fitting. Specifically, the authors propose a method called the "three - fifths protocol", which is applicable to molecular junctions with non - resonant tunneling charge transport dominated by a single energy level (molecular orbital, MO).

### Main Problems and Solutions

1. **Problem Description**:
- Experimentalists hope to reliably and easily extract the microscopic parameters of molecular junctions from current - voltage measurements.
- Traditional I - V data fitting methods may lead to inaccurate parameter estimations, especially in the presence of noise in the low - bias region.

2. **Proposed Solution**:
- A simple mathematical transformation method is proposed to redraw the measured I - V curve as a curve of \( V^{5/3}/I \) versus V.
- This curve has one peak at positive bias and one peak at negative bias, denoted as \( V_p^+ \) and \( V_p^- \) respectively.
- Through these peaks and their corresponding current values \( I_p^+ = I(V_p^+) \) and \( I_p^- = I(V_p^-) \), the following three key parameters can be calculated:
- Molecular orbital energy shift \( \varepsilon_0 = E_{\text{MO}} - E_F \)
- Bias - driven molecular orbital shift intensity \( \gamma \)
- Low - bias conductance \( G \)

### Formula Derivation and Application

According to the formulas provided in the paper:

1. **Molecular Orbital Energy Shift**:
\[
|\varepsilon_0| \approx e \frac{V_p^+ + |V_p^-|}{2}
\]

2. **Bias - Driven Molecular Orbital Shift Intensity**:
\[
\gamma \approx \frac{4}{5} \frac{V_p^+ - |V_p^-|}{V_p^+ + |V_p^-|}
\]

3. **Low - Bias Conductance**:
\[
G \approx \frac{3}{8} \left( \frac{I_p^+}{V_p^+} + \frac{I_p^-}{V_p^-} \right)
\]

### Method Advantages

- **Simplicity**: Parameter extraction can be completed with just a few simple arithmetic operations and can even be done with a calculator.
- **Reliability**: It avoids the complex data fitting process and reduces errors caused by noise or improper fitting.
- **Wide Applicability**: It is applicable to different types of molecular junctions, including metal and non - metal electrodes, molecular species with localized σ electrons and delocalized π electrons, and multiple fabrication techniques (such as mechanically controlled break junctions, STM break junctions, conductive - probe AFM junctions, and large - area junctions).

### Conclusion

By verifying the effectiveness of the "three - fifths protocol" on the most commonly used molecular tunnel junction fabrication platforms, the authors aim to convince the molecular electronics community of the generality and practicality of this method, which can provide important insights into the molecular structure - tunneling transport relationship. In addition, this method has certain advantages over the standard transition voltage spectroscopy (TVS) method in some cases because it requires a narrower bias range.