Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields

Haitian Su,Ji-Yin Wang,Han Gao,Yi Luo,Shili Yan,Xingjun Wu,Guoan Li,Jie Shen,Li Lu,Dong Pan,Jianhua Zhao,Po Zhang,H. Q. Xu

2024-08-05

Abstract:Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect". Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of superconducting diode effect under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the unidirectional superconductivity regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for unidirectional superconductivity that is possibly related to non-equilibrium dynamics or dissipation in periodically driven superconducting systems.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the enhancement mechanism of unidirectional superconductivity (USC) in Al - InAs nanowire - Al Josephson junctions under microwave irradiation and magnetic field. Specifically, the researchers focus on the following points:

1. **Enhancement of the Superconducting Diode Effect (SDE)**:
- Under microwave driving, the SDE is manifested as an increase in the horizontal offset of the zero - voltage step in the voltage - current characteristic curve.
- This offset increases with the increase of microwave power, and at high driving amplitudes, the device can enter the unidirectional superconductivity (USC) region.

2. **The influence of the magnetic field direction on SDE**:
- The direction of the offset will change sign with the reversal of the magnetic field direction, indicating the important role of the magnetic field in SDE.
- The magnitude of the offset has an approximately linear relationship with the microwave power (in dBm) under high - power and large - magnetic - field conditions.

3. **New physical mechanisms**:
- The experimental results cannot be fully explained by existing theoretical models (such as the resistively shunted junction model, RSJ model), implying that there may be new mechanisms, such as non - equilibrium dynamics or dissipation phenomena, leading to the generation of USC.

### Formula representation

The formulas involved in the paper include expressions describing the phase relationship of superconducting currents and parameters related to SDE. Here are some key formulas:

- **Phase relationship of superconducting currents**:
\[
I(\phi)=I_1\sin(\phi + \phi_0)+I_2\sin(2\phi + 2\phi_0+\delta_{12})
\]
where \(I\) is the supercurrent, \(\phi\) is the phase difference of the junction, \(\delta_{12}\) is the phase offset between the two harmonic terms, and \(I_1, I_2, \phi_0\) are constant parameters.

- **Offset current \(I_{\text{off}}\)**:
\[
I_{\text{off}}=\frac{I_{\text{sw}}^- + I_{\text{sw}}^+}{2}
\]
where \(I_{\text{sw}}^-\) and \(I_{\text{sw}}^+\) are the switching currents during negative and positive scans respectively.

Through these studies, the authors hope to reveal new mechanisms of SDE and USC in superconducting systems under the combined action of microwave irradiation and magnetic field, and provide theoretical and technical support for the further development of low - dissipation logic devices.